STGWT80H65FB

Mfr. #:: STGWT80H65FB
制造商:: STMicroelectronics
描述:: IGBT Transistors IGBT & Power Bipola
生命周期:: 制造商新产品。
数据表:: STGWT80H65FB 数据表
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更多信息:: STGWT80H65FB 更多信息 STGWT80H65FB Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 600-650V IGBTs

打包: 管子

单位重量: 0.238311 oz

安装方式: 通孔

包装盒: TO-3P-3, SC-65-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-3P

配置: 单身的

最大功率: 469W

反向恢复时间trr: -

电流收集器 Ic-Max: 120A

电压收集器发射极击穿最大值: 650V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 240A

Vce-on-Max-Vge-Ic: 2V @ 15V, 80A

开关能源: 2.1mJ (on), 1.5mJ (off)

栅极电荷: 414nC

Td-on-off-25°C: 84ns/280ns

测试条件: 400V, 80A, 10 Ohm, 15V

钯功耗: 469 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.6 V

25-C 时的连续集电极电流: 120 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: 20 V

连续集电极电流 Ic-Max: 80 A

Tags: STGWT8, STGWT, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWT80H65FB 描述

***Components: In a Tube of 30, STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P

***et Europe: Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube

***ied Electronics & Automation: IGBT Trench HB Series 650V 80A TO-3P

***i-Key: IGBT 650V 120A 469W TO3P-3L

***ark: Ptd High Voltage

STGWT80H65FB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型号	制造商	描述	库存	价格
STGWT80H65FB DISTI # 497-15141-5-ND	STMicroelectronics	IGBT 650V 120A 469W TO3P-3L RoHS: Compliant Min Qty: 1 Container: Tube	295In Stock	1020:$7.2800 510:$7.9170 120:$8.8998 30:$10.1010 1:$11.4700
STGWT80H65FB DISTI # STGWT80H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube (Alt: STGWT80H65FB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€4.7900 10:€4.3900 25:€4.1900 50:€3.9900 100:€3.8900 500:€3.6900 1000:€3.4900
STGWT80H65FB DISTI # STGWT80H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80H65FB) RoHS: Compliant Min Qty: 300 Container: Tube	Americas - 0	300:$7.6900 360:$7.3900 660:$6.9900 1500:$6.6900 3000:$6.5900
STGWT80H65FB DISTI # 26Y5808	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$6.5000
STGWT80H65FB DISTI # 511-STGWT80H65FB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed RoHS: Compliant	0	1:$10.9100 10:$10.0300 25:$9.6200 100:$8.4700 250:$8.0600 500:$7.5400 1000:$6.9100
STGWT80H65FB DISTI # 8297145P	STMicroelectronics	IGBT TRENCH HB SERIES 650V 80A TO-3P, TU	67	20:£4.3900 10:£4.9600
STGWT80H65FB	STMicroelectronics		299

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