CGHV96100F2

Mfr. #:: CGHV96100F2
制造商:: N/A
描述:: RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
生命周期:: 制造商新产品。
数据表:: CGHV96100F2 数据表
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ECAD Model:
更多信息:: CGHV96100F2 更多信息

产品属性
属性值

制造商: 科锐

产品分类: 晶体管 - FET、MOSFET - 单

打包: 托盘

安装方式: 拧紧

工作温度范围: -

包装盒: 440210

技术: 氮化镓碳化硅

配置: 单身的

晶体管型: HEMT

获得: 12.4 dB

班级: -

输出功率: 131 W

钯功耗: -

最高工作温度: + 150 C

最低工作温度: - 40 C

应用: -

工作频率: 7.9 GHz to 9.6 GHz

Id 连续漏极电流: 12 A

Vds-漏-源-击穿电压: 100 V

VGS-th-Gate-Source-Threshold-Voltage: - 3 V

Rds-On-Drain-Source-Resistance: -

晶体管极性: N通道

正向跨导最小值: -

开发套件: CGHV96100F2-TB

VGS-栅极-源极击穿电压: - 10 V to + 2 V

栅源截止电压: -

最大漏栅电压: -

NF-噪声系数: -

P1dB-压缩点: -

Tags: CGHV9, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV96100F2 描述

***i-Key: FET RF 100V 9.6GHZ 440210

CGHV96100F2 更多信息

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

型号	制造商	描述	库存	价格
CGHV96100F2 DISTI # CGHV96100F2-ND	Wolfspeed	RF MOSFET HEMT 40V 440210 RoHS: Compliant Min Qty: 1 Container: Tray	210In Stock	1:$717.5400
CGHV96100F2-TB DISTI # CGHV96100F2-TB-ND	Wolfspeed	TEST FIXTURE FOR CGHV96100F2 RoHS: Compliant Min Qty: 1 Container: Bulk	On Order	1:$550.0000
CGHV96100F2 DISTI # 941-CGHV96100F2	Cree, Inc.	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt RoHS: Compliant	98	1:$717.5400
CGHV96100F2-TB DISTI # 941-CGHV96100F2-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Compliant	0	1:$550.0000

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	Mfr.#: CGHV96050F1-TB OMO.#: OMO-CGHV96050F1-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: CGHV96100F2-TB OMO.#: OMO-CGHV96100F2-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: CGHV96050F2-TB OMO.#: OMO-CGHV96050F2-TB-WOLFSPEED	TEST FIXTURE FOR CGHV96050F2
	Mfr.#: CGHV96100F2-TB OMO.#: OMO-CGHV96100F2-TB-WOLFSPEED	TEST FIXTURE FOR CGHV96100F2
	Mfr.#: CGHV96100F2 OMO.#: OMO-CGHV96100F2-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
	Mfr.#: CGHV96050F2 OMO.#: OMO-CGHV96050F2-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
	Mfr.#: CGHV96050F1 OMO.#: OMO-CGHV96050F1-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT