CGHV96050F1

Mfr. #:: CGHV96050F1
制造商:: N/A
描述:: RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
生命周期:: 制造商新产品。
数据表:: CGHV96050F1 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: CGHV96050F1 更多信息

产品属性
属性值

制造商：: 科沃

产品分类：: 射频 JFET 晶体管

RoHS：: Y

晶体管类型：: HEMT

技术：: 氮化镓碳化硅

获得：: 21.8 dB

晶体管极性：: N通道

Id - 连续漏极电流：: 1.7 A

输出功率：: 178 W

最大漏栅电压：: 65 V

最低工作温度：: - 40 C

最高工作温度：: + 85 C

Pd - 功耗：: 67 W

安装方式：: 贴片/贴片

包装/案例：: DFN-6

打包：: 卷轴

应用：: 军用雷达、干扰器、测试仪器、宽带或窄带放大器、陆地移动和军用

配置：: 单三重排水

工作频率：: 1.2 GHz to 2.7 GHz

品牌：: 科沃

开发套件：: QPD1013EVB01

湿气敏感：: 是的

产品类别：: 射频 JFET 晶体管

出厂包装数量：: 100

子类别：: 晶体管

Tags: CGHV960, CGHV9, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV96050F1 描述

***i-Key: FET RF 100V 9.6GHZ 440210

CGHV96050F1 更多信息

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

型号	制造商	描述	库存	价格
CGHV96050F1 DISTI # CGHV96050F1-ND	Wolfspeed	RF MOSFET HEMT 40V 440210 RoHS: Compliant Min Qty: 1 Container: Tray	12In Stock	1:$458.6800
CGHV96050F1-TB DISTI # CGHV96050F1-TB-ND	Wolfspeed	BOARD TEST FIXTURE FOR CGHV96050 RoHS: Compliant Min Qty: 2 Container: Bulk	Temporarily Out of Stock	2:$550.0000
CGHV96050F1 DISTI # 941-CGHV96050F1	Cree, Inc.	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt RoHS: Compliant	50	1:$458.6800
CGHV96050F1-TB DISTI # 941-CGHV96050F1-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Not compliant	1	1:$550.0000

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	Mfr.#: CGHV96100F2 OMO.#: OMO-CGHV96100F2	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
	Mfr.#: CGHV96050F1 OMO.#: OMO-CGHV96050F1	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
	Mfr.#: CGHV96050F1-TB OMO.#: OMO-CGHV96050F1-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: CGHV96100F2-TB OMO.#: OMO-CGHV96100F2-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: CGHV96050F1-TB OMO.#: OMO-CGHV96050F1-TB-WOLFSPEED	BOARD TEST FIXTURE FOR CGHV96050
	Mfr.#: CGHV96050F2-TB OMO.#: OMO-CGHV96050F2-TB-WOLFSPEED	TEST FIXTURE FOR CGHV96050F2
	Mfr.#: CGHV96100F2-TB OMO.#: OMO-CGHV96100F2-TB-WOLFSPEED	TEST FIXTURE FOR CGHV96100F2
	Mfr.#: CGHV96100F2 OMO.#: OMO-CGHV96100F2-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
	Mfr.#: CGHV96050F2 OMO.#: OMO-CGHV96050F2-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
	Mfr.#: CGHV96050F1 OMO.#: OMO-CGHV96050F1-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT