CGHV96050F1

Mfr. #:: CGHV96050F1
制造商:: N/A
描述:: RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT
生命周期:: 制造商新产品。
数据表:: CGHV96050F1 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: CGHV96050F1 更多信息

产品属性
属性值

制造商: Wolfspeed / 克里

产品分类: 晶体管 - FET、MOSFET - 单

打包: 托盘

安装方式: 拧紧

工作温度范围: -

包装盒: 440210

技术: 氮化镓碳化硅

配置: 单身的

晶体管型: HEMT

获得: 16 dB

班级: -

输出功率: 80 W

钯功耗: -

最高工作温度: + 150 V

最低工作温度: - 40 C

应用: -

工作频率: 7.9 GHz to 9.6 GHz

Id 连续漏极电流: 6 A

Vds-漏-源-击穿电压: 100 V

VGS-th-Gate-Source-Threshold-Voltage: - 3 V

Rds-On-Drain-Source-Resistance: -

晶体管极性: N通道

正向跨导最小值: -

开发套件: CGHV96050F1-TB

VGS-栅极-源极击穿电压: - 10 V to + 2 V

栅源截止电压: -

最大漏栅电压: -

NF-噪声系数: -

P1dB-压缩点: -

Tags: CGHV960, CGHV9, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV96050F1 描述

***i-Key: FET RF 100V 9.6GHZ 440210

CGHV96050F1 更多信息

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

型号	制造商	描述	库存	价格
CGHV96050F1 DISTI # CGHV96050F1-ND	Wolfspeed	RF MOSFET HEMT 40V 440210 RoHS: Compliant Min Qty: 1 Container: Tray	12In Stock	1:$458.6800
CGHV96050F1-TB DISTI # CGHV96050F1-TB-ND	Wolfspeed	BOARD TEST FIXTURE FOR CGHV96050 RoHS: Compliant Min Qty: 2 Container: Bulk	Temporarily Out of Stock	2:$550.0000
CGHV96050F1 DISTI # 941-CGHV96050F1	Cree, Inc.	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt RoHS: Compliant	50	1:$458.6800
CGHV96050F1-TB DISTI # 941-CGHV96050F1-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Not compliant	1	1:$550.0000

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	Mfr.#: CGHV96050F1 OMO.#: OMO-CGHV96050F1-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT