OMO ElectronicOMO Electronic
Expand menu
0 购物车

STGW60H65DFB-4

STGW60H65DFB-4
Mfr. #:
STGW60H65DFB-4
制造商:
STMicroelectronics
描述:
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
生命周期:
制造商新产品。
数据表:
STGW60H65DFB-4 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STGW60H65DFB-4 更多信息 STGW60H65DFB-4 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
IGBT晶体管
技术：
硅
包装/案例：
TO-247-4
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.6 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
80 A
Pd - 功耗：
283 W
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
系列：
STGW60H65DFB-4
品牌：
意法半导体
栅极-发射极漏电流：
250 uA
产品类别：
IGBT晶体管
出厂包装数量：
600
子类别：
IGBT
Tags
STGW60H65DF, STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trench gate field-stop IGBT, HB series650 V, 60 A high speed
***et Europe
PTD HIGH VOLTAGE
***ark
IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
TBGI, SINGOLO, 650V, 80A, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:375W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
型号 制造商 描述 库存 价格
STGW60H65DFB-4
DISTI # STGW60H65DFB-4-ND		STMicroelectronicsIGBT
RoHS: Not compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$5.6963
STGW60H65DFB-4
DISTI # STGW60H65DFB-4		STMicroelectronicsPTD HIGH VOLTAGE (Alt: STGW60H65DFB-4)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 500:€4.5900
  • 1000:€4.5900
  • 100:€4.6900
  • 50:€4.7900
  • 25:€4.8900
  • 10:€5.0900
  • 1:€5.1900
STGW60H65DFB-4
DISTI # STGW60H65DFB-4		STMicroelectronicsPTD HIGH VOLTAGE - Trays (Alt: STGW60H65DFB-4)
RoHS: Compliant
Min Qty: 600
Container: Tray		Americas - 0
  • 6000:$4.1900
  • 3000:$4.2900
  • 1800:$4.3900
  • 1200:$4.4900
  • 600:$4.5900
STGW60H65DFB-4
DISTI # 48AC3296		STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$4.3800
STGW60H65DFB-4
DISTI # 511-STGW60H65DFB-4		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed0
  • 1:$8.3300
  • 10:$7.5300
  • 25:$7.1800
  • 100:$6.2300
  • 250:$5.9600
  • 500:$5.4300
  • 1000:$4.7300
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		74
  • 250:$7.3700
  • 100:$7.9000
  • 50:$8.8700
  • 10:$9.8800
  • 5:$11.1400
  • 1:$12.7800
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-24774
  • 100:£4.5100
  • 50:£4.8600
  • 10:£5.2100
  • 5:£5.6200
  • 1:£6.0300
图片 型号 描述
STGW60H65FB

Mfr.#: STGW60H65FB

OMO.#: OMO-STGW60H65FB

 IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT
STGW60H65DRF

Mfr.#: STGW60H65DRF

OMO.#: OMO-STGW60H65DRF

 IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
STGW60H65DF

Mfr.#: STGW60H65DF

OMO.#: OMO-STGW60H65DF

 IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
STGW60H65DFB-4

Mfr.#: STGW60H65DFB-4

OMO.#: OMO-STGW60H65DFB-4

 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
STGW60H65F

Mfr.#: STGW60H65F

OMO.#: OMO-STGW60H65F

 IGBT Transistors 60A 650V FST IGBT Very High Switching
STGW60H65FB

Mfr.#: STGW60H65FB

OMO.#: OMO-STGW60H65FB-STMICROELECTRONICS

 IGBT 650V 80A 375W TO247
STGW60H65DFB

Mfr.#: STGW60H65DFB

OMO.#: OMO-STGW60H65DFB-STMICROELECTRONICS

 IGBT 650V 80A 375W TO-247
STGW60H65F

Mfr.#: STGW60H65F

OMO.#: OMO-STGW60H65F-STMICROELECTRONICS

 IGBT Transistors 60A 650V FST IGBT Very High Switching
STGW60H60DLFB

Mfr.#: STGW60H60DLFB

OMO.#: OMO-STGW60H60DLFB-STMICROELECTRONICS

 IGBT 600V 80A 375W TO-247
STGW60H65DFB-4

Mfr.#: STGW60H65DFB-4

OMO.#: OMO-STGW60H65DFB-4-STMICROELECTRONICS

 PTD HIGH VOLTAGE (Alt: STGW60H65DFB-4)
可用性
库存:
Available
订购:
2000
输入数量:
STGW60H65DFB-4的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$8.33
US$8.33
10
US$7.53
US$75.30
25
US$7.18
US$179.50
100
US$6.23
US$623.00
250
US$5.96
US$1 490.00
500
US$5.43
US$2 715.00
1000
US$4.73
US$4 730.00
2500
US$4.56
US$11 400.00
从...开始
最新产品
More Newest Products
Top