IPD65R190C7ATMA1

Mfr. #:: IPD65R190C7ATMA1
制造商:: Infineon Technologies
描述:: MOSFET N-CH 650V 13A TO-252
生命周期:: 制造商新产品。
数据表:: IPD65R190C7ATMA1 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: IPD65R190C7ATMA1 更多信息

产品属性
属性值

Tags: IPD65R1, IPD65R, IPD65, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD65R190C7ATMA1 描述

***ark: MOSFET Transistor, N Channel, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO252-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

IPD65R190C7ATMA1 更多信息

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

型号	制造商	描述	库存	价格
IPD65R190C7ATMA1 DISTI # V72:2272_06377199	Infineon Technologies AG	Trans MOSFET N-CH 650V 13A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
IPD65R190C7ATMA1 DISTI # V36:1790_06377199	Infineon Technologies AG	Trans MOSFET N-CH 650V 13A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0	2500000:$1.3070 1250000:$1.3090 250000:$1.3970 25000:$1.5270 2500:$1.5480
IPD65R190C7ATMA1 DISTI # IPD65R190C7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 13A TO-252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2475In Stock	1000:$1.4664 500:$1.7698 100:$2.1541 10:$2.6800 1:$2.9800
IPD65R190C7ATMA1 DISTI # IPD65R190C7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 13A TO-252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2475In Stock	1000:$1.4664 500:$1.7698 100:$2.1541 10:$2.6800 1:$2.9800
IPD65R190C7ATMA1 DISTI # IPD65R190C7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 13A TO-252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$1.2764 2500:$1.3255
IPD65R190C7ATMA1 DISTI # IPD65R190C7ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 13A 3-Pin DPAK T/R - Tape and Reel (Alt: IPD65R190C7ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$1.0900 5000:$1.1900 10000:$1.1900 15000:$1.1900 2500:$1.2900
IPD65R190C7ATMA1 DISTI # SP000928648	Infineon Technologies AG	Trans MOSFET N-CH 700V 13A 3-Pin DPAK T/R (Alt: SP000928648) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€1.0379 15000:€1.1119 10000:€1.1979 5000:€1.2969 2500:€1.5569
IPD65R190C7ATMA1 DISTI # 54X5226	Infineon Technologies AG	MOSFET, N-CH, 650V, 13A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.168ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V RoHS Compliant: Yes	5000	1000:$1.3600 500:$1.6500 100:$1.8900 10:$2.3500 1:$2.7800
IPD65R190C7ATMA1 DISTI # 726-IPD65R190C7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	0	1:$2.7500 10:$2.3300 100:$1.8700 500:$1.6300 1000:$1.3500
IPD65R190C7 DISTI # 726-IPD65R190C7	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	0	1:$2.7500 10:$2.3300 100:$1.8700 500:$1.6300 1000:$1.3500
IPD65R190C7ATMA1 DISTI # 2420492	Infineon Technologies AG	MOSFET, N-CH, 650V, 13A, TO-252-3 RoHS: Compliant	5000	2500:$1.9900 1000:$2.0300 500:$2.4600 100:$2.8200 10:$3.5100 1:$4.1400
IPD65R190C7ATMA1 DISTI # 2420492	Infineon Technologies AG	MOSFET, N-CH, 650V, 13A, TO-252-3	4900	100:£1.7900 10:£2.2300 1:£2.9900

图片	型号	描述
	Mfr.#: IPD65R190C7ATMA1 OMO.#: OMO-IPD65R190C7ATMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPD65R190C7 OMO.#: OMO-IPD65R190C7	MOSFET HIGH POWER_NEW
	Mfr.#: IPD65R190C7ATMA1 OMO.#: OMO-IPD65R190C7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 13A TO-252
	Mfr.#: IPD65R190C7 OMO.#: OMO-IPD65R190C7-1190	MOSFET HIGH POWER_NEW

IPD65R190C7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes