 | | | |
| PartNumber | IPD65R190C7ATMA1 | IPD65R190C7 | IPD65R1K0CEAUMA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | MOSFET CONSUMER |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | PG-TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Id Continuous Drain Current | 13 A | 13 A | - |
| Rds On Drain Source Resistance | 168 mOhms | 190 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 23 nC | 23 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 72 W | 72 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | CoolMOS C7 | CoolMOS C7 | CoolMOS CE |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 9 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 11 ns | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 54 ns | 54 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Part # Aliases | IPD65R190C7 SP000928648 | IPD65R190C7ATMA1 SP000928648 | IPD65R1K0CE SP001421368 |
| Unit Weight | 0.139332 oz | 0.028219 oz | 0.011993 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD65R1K4CFD | MOSFET N-Ch 700V 8.2A DPAK-2 | |
| IPD65R1K4CFDBTMA1 | MOSFET N-Ch 700V 8.2A DPAK-2 | ||
| IPD65R190C7ATMA1 | MOSFET HIGH POWER_NEW | ||
| IPD65R190C7 | MOSFET HIGH POWER_NEW | ||
| IPD65R1K0CEAUMA1 | MOSFET CONSUMER | ||
| IPD65R1K4CFDATMA2 | MOSFET | ||
| IPD65R190C7ATMA1 | MOSFET N-CH 650V 13A TO-252 | ||
| IPD65R1K4CFDATMA1 | MOSFET N-CH 650V 2.8A TO-252 | ||
| IPD65R1K5CEAUMA1 | MOSFET N-CH 700V 5.2A TO252-3 | ||
| IPD65R1K4CFDATMA2 | LOW POWER_LEGACY | ||
| IPD65R1K0CEAUMA1 | MOSFET N-CH 650V TO-252 | ||
| IPD65R1K4C6ATMA1 | MOSFET N-Ch 700V 3.2A DPAK-2 | ||
| IPD65R1K4CFDBTMA1 | RF Bipolar Transistors MOSFET N-Ch 700V 8.2A DPAK-2 | ||
Infineon Technologies |
IPD65R1K4C6ATMA1 | MOSFET N-Ch 700V 3.2A DPAK-2 | |
| IPD65R190C7 | MOSFET HIGH POWER_NEW | ||
| IPD65R1K4C6 | MOSFET N-Ch 700V 3.2A DPAK-2 | ||
| IPD65R1K4CFD | MOSFET N-Ch 700V 8.2A DPAK-2 |