GS-065-008-1-L

GS-065-008-1-L
Mfr. #:
GS-065-008-1-L
制造商:
GaN Systems
描述:
MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
生命周期:
制造商新产品。
数据表:
GS-065-008-1-L 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GS-065-008-1-L 更多信息
产品属性
属性值
制造商:
氮化镓系统
产品分类:
MOSFET
RoHS:
Y
技术:
氮化镓硅
安装方式:
贴片/贴片
包装/案例:
PDFN-6
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
650 V
Id - 连续漏极电流:
8 A
Rds On - 漏源电阻:
541 mOhms
Vgs th - 栅源阈值电压:
1.4 V
Vgs - 栅源电压:
- 10 V to 7 V
Qg - 门电荷:
1.5 nC
最低工作温度:
- 40 C
最高工作温度:
+ 150 C
配置:
单身的
频道模式:
增强
打包:
卷轴
系列:
GS-065
晶体管类型:
1 N-Channel
品牌:
氮化镓系统
湿气敏感:
是的
产品类别:
MOSFET
出厂包装数量:
250
子类别:
MOSFET
第 # 部分别名:
GS-065-008-1-L-E01-MR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GS-065-0xx 650V Enhancement Mode GaN Transistors
GaN Systems GS-065-0xx 650V Enhancement Mode GaN Transistors allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield.  The GS-065-004-1-L is a bottom-side cooled transistor in a 5×6mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high-efficiency power switching.
图片 型号 描述
LMG1205YFXR

Mfr.#: LMG1205YFXR

OMO.#: OMO-LMG1205YFXR

Gate Drivers 5A 100V HALF-BRIDGE GATE DRIVER FOR ENH
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR

MOSFET 650V Enhancement Mode Transistor
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR

MOSFET 650V 22A E-Mode GaN
GS66504B-E01-MR

Mfr.#: GS66504B-E01-MR

OMO.#: OMO-GS66504B-E01-MR

MOSFET 650V 15A E-Mode GaN
SN74LVC1G08DCKR

Mfr.#: SN74LVC1G08DCKR

OMO.#: OMO-SN74LVC1G08DCKR

Logic Gates Single 2-Input Pos
NC7SZ00P5X

Mfr.#: NC7SZ00P5X

OMO.#: OMO-NC7SZ00P5X

Logic Gates UHS 2-Inp NAND Gate
DSC1001DI2-006.7800

Mfr.#: DSC1001DI2-006.7800

OMO.#: OMO-DSC1001DI2-006-7800-MICROCHIP-TECHNOLOGY

Oscillator MEMS 6.78MHz ±25ppm (Stability) 15pF CMOS 55% 1.8V/2.5V/3.3V Automotive 4-Pin QFN SMD Tube
SN74LVC1G08DCKR

Mfr.#: SN74LVC1G08DCKR

OMO.#: OMO-SN74LVC1G08DCKR-TEXAS-INSTRUMENTS

Logic Gates Single 2-Input Pos
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR-1190

MOSFET 650V Enhancement Mode Transisto
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR-1190

MOSFET 650V 22A E-Mode GaN
可用性
库存:
506
订购:
2489
输入数量:
GS-065-008-1-L的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$5.79
US$5.79
10
US$4.65
US$46.50
100
US$4.24
US$424.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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