STGW40H120DF2

Mfr. #:: STGW40H120DF2
制造商:: STMicroelectronics
描述:: IGBT 1200V 40A HS TO-247
生命周期:: 制造商新产品。
数据表:: STGW40H120DF2 数据表
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更多信息:: STGW40H120DF2 更多信息 STGW40H120DF2 Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 900-1300V IGBTs

打包: 管子

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247

配置: 单身的

最大功率: 468W

反向恢复时间trr: 488ns

电流收集器 Ic-Max: 80A

电压收集器发射极击穿最大值: 1200V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 160A

Vce-on-Max-Vge-Ic: 2.6V @ 15V, 40A

开关能源: 1mJ (on), 1.32mJ (off)

栅极电荷: 187nC

Td-on-off-25°C: 18ns/152ns

测试条件: 600V, 40A, 10 Ohm, 15V

钯功耗: 468 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 1200 V

集电极-发射极-饱和-电压: 2.1 V

25-C 时的连续集电极电流: 80 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: 20 V

连续集电极电流 Ic-Max: 40 A

Tags: STGW40H1, STGW40H, STGW40, STGW4, STGW, STG

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW40H120DF2 描述

***ical: Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW40H120 Series 1200 V 40 A High Speed Trench Gate Field-Stop IGBT - TO-247

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube

***ronik: IGBT 1200V 80A 2.1V TO247-3

***i-Key: IGBT 1200V 40A HS TO-247

***ark: IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:468W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:468W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:H Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)

***nell: IGBT, SINGOLO, 1.2KV, 80A, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):2.1V; Dissipazione di Potenza Pd:468W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:H Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)

STGW40H120DF2 更多信息

IGBT H Series: STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Market price

型号	制造商	描述	库存	价格
STGW40H120DF2 DISTI # 32904011	STMicroelectronics	Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	570	570:$5.6034
STGW40H120DF2 DISTI # 497-14715-5-ND	STMicroelectronics	IGBT 1200V 40A HS TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	513In Stock	510:$6.6727 120:$7.6629 30:$8.8253 10:$9.2560 1:$10.2500
STGW40H120DF2 DISTI # V36:1790_06560761	STMicroelectronics	Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
STGW40H120DF2 DISTI # STGW40H120DF2	STMicroelectronics	Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube (Alt: STGW40H120DF2) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€4.3900 500:€4.7900 100:€4.8900 50:€5.0900 25:€5.2900 10:€5.5900 1:€6.0900
STGW40H120DF2 DISTI # STGW40H120DF2	STMicroelectronics	Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW40H120DF2) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$5.1900 3600:$5.2900 2400:$5.4900 1200:$5.7900 600:$6.0900
STGW40H120DF2 DISTI # 45AC7604	STMicroelectronics	Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Bulk (Alt: 45AC7604) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	500:$7.1000 250:$7.7000 100:$8.0100 50:$8.5600 25:$9.0900 10:$9.4900 1:$10.4000
STGW40H120DF2 DISTI # 45AC7604	STMicroelectronics	IGBT, SINGLE, 1.2KV, 80A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):2.1V,Power Dissipation Pd:468W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes	55	250:$5.6600 500:$5.6600 10:$6.1300 25:$6.1300 50:$6.1300 100:$6.1300 1:$6.6900
STGW40H120DF2 DISTI # 511-STGW40H120DF2	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed RoHS: Compliant	582	1:$9.7500 10:$8.8100 25:$8.4000 100:$7.2900 250:$6.9700 500:$6.3500
STGW40H120DF2 DISTI # 2807176	STMicroelectronics	IGBT, SINGLE, 1.2KV, 80A, TO-247 RoHS: Compliant	2378	510:$10.1100 120:$11.6100 30:$13.3800 1:$15.5300
STGW40H120DF2 DISTI # 2807176	STMicroelectronics	IGBT, SINGLE, 1.2KV, 80A, TO-247	2378	100:£5.6800 50:£6.1100 10:£6.5400 5:£7.5900 1:£8.1700
STGW40H120DF2 DISTI # XSKDRABV0046907	STMicroelectronics	Array/NetworkResistor,Isolated,MetalGlaze/thickFilm, 33ohm, 25V,1%+/-Tol,200ppm/Cel,SurfaceMount, 0408 RoHS: Compliant	290 in Stock0 on Order	290:$8.5440 90:$9.1560
STGW40H120DF2 DISTI # IGBT1410	STMicroelectronics	IGBT 1200V80A2.1VTO247-3	Stock DE - 236Stock HK - 0Stock US - 0	30:$6.6900 60:$6.2700 90:$6.1700 120:$6.0700 180:$5.7100

图片	型号	描述
	Mfr.#: STGW40H65DFB OMO.#: OMO-STGW40H65DFB	IGBT Transistors 600V 40A trench gate field-stop IGBT
	Mfr.#: STGW40V60DF OMO.#: OMO-STGW40V60DF-STMICROELECTRONICS	IGBT 600V 80A 283W TO247
	Mfr.#: STGW40H120F2 OMO.#: OMO-STGW40H120F2-STMICROELECTRONICS	IGBT Transistors IGBT & Power Bipola
	Mfr.#: STGW40NC60WD OMO.#: OMO-STGW40NC60WD-STMICROELECTRONICS	IGBT 600V 70A 250W TO247
	Mfr.#: STGW40NC60WD GW40NC60WD OMO.#: OMO-STGW40NC60WD-GW40NC60WD-1190	全新原装
	Mfr.#: STGW40H65DFB-4 OMO.#: OMO-STGW40H65DFB-4-STMICROELECTRONICS	STMSTGW40H65DFB-4 - Trays (Alt: STGW40H65DFB-4)
	Mfr.#: STGW40N120KD,40N120KD OMO.#: OMO-STGW40N120KD-40N120KD-1190	全新原装
	Mfr.#: STGW40NC60WD TO247 OMO.#: OMO-STGW40NC60WD-TO247-1190	全新原装
	Mfr.#: STGW40V60DF GW40V60DF OMO.#: OMO-STGW40V60DF-GW40V60DF-1190	全新原装
	Mfr.#: STGW40V60DF,STGWT40V60DF OMO.#: OMO-STGW40V60DF-STGWT40V60DF-1190	全新原装

STGW40H120DF2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes