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SCT30N120

SCT30N120
Mfr. #:
SCT30N120
制造商:
STMicroelectronics
描述:
MOSFET N-CH 1200V 45A HIP247
生命周期:
制造商新产品。
数据表:
SCT30N120 数据表
交货:
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ECAD Model:
更多信息:
SCT30N120 更多信息 SCT30N120 Product Details
产品属性
属性值
制造商
英石
产品分类
FET - 单
系列
碳化硅MOSFET
打包
管子
单位重量
1.340411 oz
安装方式
通孔
包装盒
TO-247-3
技术
碳化硅
工作温度
-55°C ~ 200°C (TJ)
安装型
通孔
通道数
1 Channel
供应商-设备-包
HiP247
配置
单身的
FET型
MOSFET N 沟道，金属氧化物
最大功率
270W
晶体管型
1 N-Channel
漏源电压 Vdss
1200V (1.2kV)
输入电容-Ciss-Vds
1700pF @ 400V
FET-Feature
碳化硅 (SiC)
Current-Continuous-Drain-Id-25°C
40A (Tc)
Rds-On-Max-Id-Vgs
100 mOhm @ 20A, 20V
Vgs-th-Max-Id
2.6V @ 1mA (Typ)
栅极电荷-Qg-Vgs
105nC @ 20V
钯功耗
270 W
最高工作温度
+ 200 C
最低工作温度
- 55 C
秋季时间
28 ns
上升时间
20 ns
VGS-栅极-源极-电压
- 10 V/+ 25 V
Id 连续漏极电流
45 A
Vds-漏-源-击穿电压
1200 V
VGS-th-Gate-Source-Threshold-Voltage
2.6 V
Rds-On-Drain-Source-Resistance
80 mOhms
晶体管极性
N通道
典型关断延迟时间
45 ns
典型开启延迟时间
19 ns
Qg-门电荷
105 nC
Tags
SCT30N, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
***ure Electronics
Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247
***ark
Mosfet, N Ch, 1.2Kv, 40A, Hip247-3; Mosfet Configuration:single; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.08Ohm; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes
SCT30N120 Silicon Carbide Power MOSFET
STMicroelectronics SCT30N120 Silicon Carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device's housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Silicon Carbide Power MOSFETs
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.
型号 制造商 描述 库存 价格
SCT30N120
DISTI # 32450096		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
RoHS: Compliant		780
  • 250:$27.0900
  • 100:$27.4860
  • 50:$27.9270
  • 30:$28.6830
SCT30N120
DISTI # 497-14960-ND		STMicroelectronicsMOSFET N-CH 1200V 45A HIP247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 120:$25.8818
  • 30:$28.6340
  • 1:$32.1500
SCT30N120
DISTI # V99:2348_17706747		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
RoHS: Compliant		0
    SCT30N120
    DISTI # V36:1790_06556385    		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
    RoHS: Compliant    		0
      SCT30N120D2
      DISTI # V36:1790_17718182      		STMicroelectronicsSCT30N120D20
        SCT30N120
        DISTI # SCT30N120        		STMicroelectronicsTrans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120)
        RoHS: Compliant
        Min Qty: 1
        Container: Tube        		Europe - 0
        • 1:€36.3900
        • 5:€30.1500
        • 10:€27.0300
        • 50:€24.9500
        • 100:€23.2900
        SCT30N120
        DISTI # SCT30N120        		STMicroelectronicsTrans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120)
        RoHS: Compliant
        Min Qty: 600
        Container: Tube        		Asia - 0
        • 600:$19.6667
        • 1200:$18.7302
        • 1800:$17.8788
        • 3000:$17.1014
        • 6000:$16.3889
        • 15000:$15.9459
        • 30000:$15.5263
        SCT30N120D2
        DISTI # SCT30N120D2        		STMicroelectronicsSTMSCT30N120D2 (Alt: SCT30N120D2)
        RoHS: Compliant
        Min Qty: 1        		Europe - 0
        • 1:€19.1900
        • 10:€17.6900
        • 25:€16.7900
        • 50:€16.2900
        • 100:€16.1900
        • 500:€15.9900
        • 1000:€15.7900
        SCT30N120
        DISTI # 94X2608        		STMicroelectronicsMOSFET, N CH, 1.2KV, 40A, HIP247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes0
        • 250:$29.0400
        • 100:$29.4700
        • 50:$29.9500
        • 25:$30.7600
        • 10:$31.6600
        • 5:$32.6700
        • 1:$33.7200
        SCT30N120D2
        DISTI # 65AC6290        		STMicroelectronicsPTD WBG & POWER RF0
        • 1:$14.7500
        SCT30N120H
        DISTI # 59AC7247        		STMicroelectronicsPTD WBG & POWER RF0
        • 1:$14.7500
        SCT30N120STMicroelectronicsSingle N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247
        RoHS: Compliant        		1114Tube
        • 1:$25.4800
        • 5:$23.9200
        • 25:$22.4500
        SCT30N120
        DISTI # 511-SCT30N120        		STMicroelectronicsMOSFET 1200V silicon carbide MOSFET
        RoHS: Compliant        		0
        • 1:$26.8200
        • 5:$26.5400
        • 10:$24.7400
        • 25:$23.6300
        • 100:$21.1200
        • 250:$20.1500
        SCT30N120D2
        DISTI # 511-SCT30N120D2        		STMicroelectronicsMOSFET0
        • 490:$17.1100
        SCT30N120H
        DISTI # 511-SCT30N120H        		STMicroelectronicsMOSFET0
        • 1000:$14.1700
        SCT30N120
        DISTI # TMOSP11114        		STMicroelectronicsSiC-N 1200V 45A 80mOhm HiP247-3Stock DE - 0Stock HK - 0Stock US - 0
        • 600:$34.5300
        SCT30N120H
        DISTI # TMOS2202        		STMicroelectronicsSiC-N 1200V 45A 80mOhm H2PAK-2Stock DE - 0Stock HK - 0Stock US - 0
        • 1000:$18.8700
        SCT30N120
        DISTI # 2451116        		STMicroelectronicsMOSFET, N CH, 1.2KV, 40A, HIP247-3
        RoHS: Compliant        		0
        • 100:£20.4000
        • 50:£20.6200
        • 10:£20.8500
        • 5:£21.0700
        • 1:£21.2900
        SCT30N120
        DISTI # XSFP00000005955        		STMicroelectronicsPower Field-EffectTransistor,N-Channel,Metal-oxideSemiconductor FET
        RoHS: Compliant        		1802 in Stock0 on Order
        • 1802:$46.3300
        • 30:$50.9600
        SCT30N120
        DISTI # 2451116        		STMicroelectronicsMOSFET, N CH, 1.2KV, 40A, HIP247-3
        RoHS: Compliant        		0
        • 10:$37.2800
        • 5:$40.0000
        • 1:$40.4200
        图片 型号 描述
        SCT3022KLGC11

        Mfr.#: SCT3022KLGC11

        OMO.#: OMO-SCT3022KLGC11

        		 MOSFET Nch 1200V 95A SiC TO-247N
        SCT3060ALHRC11

        Mfr.#: SCT3060ALHRC11

        OMO.#: OMO-SCT3060ALHRC11

        		 MOSFET 650V 39A 165W SIC 60mOhm TO-247N
        SCT3105KLHRC11

        Mfr.#: SCT3105KLHRC11

        OMO.#: OMO-SCT3105KLHRC11

        		 MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
        SCT3030ALGC11

        Mfr.#: SCT3030ALGC11

        OMO.#: OMO-SCT3030ALGC11

        		 MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
        SCT3017ALGC11

        Mfr.#: SCT3017ALGC11

        OMO.#: OMO-SCT3017ALGC11-1190

        		 MOSFET, N-CH, 650V, 118A, 175DEG C, 427W, Transistor Polarity:N Channel, Continuous Drain Current Id:118A, Drain Source Voltage Vds:650V, On Resistance Rds(on):0.017ohm, Rds(on) Test Voltage Vgs:
        SCT3080KLGC11

        Mfr.#: SCT3080KLGC11

        OMO.#: OMO-SCT3080KLGC11-ROHM-SEMI

        		 MOSFET NCH 1.2KV 31A TO247N
        SCT3-32.768KHZ

        Mfr.#: SCT3-32.768KHZ

        OMO.#: OMO-SCT3-32-768KHZ-1190

        		 全新原装
        SCT3604

        Mfr.#: SCT3604

        OMO.#: OMO-SCT3604-1190

        		 全新原装
        SCT38318PG06

        Mfr.#: SCT38318PG06

        OMO.#: OMO-SCT38318PG06-1190

        		 全新原装
        SCT3040KLHRC11

        Mfr.#: SCT3040KLHRC11

        OMO.#: OMO-SCT3040KLHRC11-ROHM-SEMI

        		 AUTOMOTIVE GRADE N-CHANNEL SIC P
        可用性
        库存:
        Available
        订购:
        5000
        输入数量:
        SCT30N120的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$23.29
        US$23.29
        10
        US$22.12
        US$221.25
        100
        US$20.96
        US$2 096.05
        500
        US$19.80
        US$9 898.05
        1000
        US$18.63
        US$18 631.60
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