STU6N65M2

STU6N65M2
Mfr. #:
STU6N65M2
制造商:
STMicroelectronics
描述:
Darlington Transistors MOSFET POWER MOSFET
生命周期:
制造商新产品。
数据表:
STU6N65M2 数据表
交货:
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支付:
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ECAD Model:
更多信息:
STU6N65M2 更多信息 STU6N65M2 Product Details
产品属性
属性值
制造商
意法半导体
产品分类
晶体管 - FET、MOSFET - 单
系列
MDmesh M2
打包
管子
单位重量
0.139332 oz
安装方式
通孔
商品名
网状网
包装盒
IPAK-3
技术
钯功耗
60 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
20 ns
上升时间
7 ns
VGS-栅极-源极-电压
25 V
Id 连续漏极电流
4 A
Vds-漏-源-击穿电压
650 V
VGS-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Resistance
1.35 Ohms
晶体管极性
N通道
典型关断延迟时间
6.5 ns
典型开启延迟时间
19 ns
Qg-门电荷
9.8 nC
Tags
STU6N65, STU6N6, STU6N, STU6, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube
***et Europe
Trans MOSFET N-CH 650V 4A 3-Pin IPAK Tube
***i-Key
MOSFET N-CH 650V 4A IPAK
***ronik
N-CH 650V 4A 1350mOhm TO251
***ark
Ptd High Voltage
***ment14 APAC
Prices include import duty and tax. MOSFET, N CHANNEL, 650V, 4A, TO-251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, CANALE N, 650V, 4A, TO-251-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):1.2ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
型号 制造商 描述 库存 价格
STU6N65M2
DISTI # 30609733
STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
50
  • 50:$0.8377
  • 13:$1.0863
STU6N65M2
DISTI # 497-15044-5-ND
STMicroelectronicsMOSFET N-CH 650V 4A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
770In Stock
  • 1050:$0.7013
  • 525:$0.8882
  • 150:$1.1454
  • 75:$1.3091
  • 1:$1.6400
STU6N65M2
DISTI # C1S730200975386
STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
50
  • 50:$0.6630
  • 10:$0.8590
  • 1:$1.6500
STU6N65M2
DISTI # STU6N65M2
STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin IPAK Tube - Rail/Tube (Alt: STU6N65M2)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$0.6369
  • 6000:$0.6069
  • 12000:$0.5789
  • 18000:$0.5539
  • 30000:$0.5419
STU6N65M2
DISTI # 40Y2611
STMicroelectronicsPower MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes1382
  • 1:$1.4000
  • 10:$1.1900
  • 100:$0.9140
  • 500:$0.8080
  • 1000:$0.6380
  • 2500:$0.5920
  • 10000:$0.5450
STU6N65M2
DISTI # 511-STU6N65M2
STMicroelectronicsMOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
RoHS: Compliant
2523
  • 1:$1.4000
  • 10:$1.1900
  • 100:$0.9140
  • 500:$0.8080
  • 1000:$0.6380
  • 3000:$0.5660
  • 9000:$0.5450
STU6N65M2-S
DISTI # 511-STU6N65M2-S
STMicroelectronicsMOSFET0
  • 3000:$0.4130
STU6N65M2STMicroelectronics 812
    STU6N65M2ST Microwave CorporationPower Field-Effect Transistor
    RoHS: Compliant
    Europe - 3000
      STU6N65M2STMicroelectronics 3544
        STU6N65M2
        DISTI # 2460384
        STMicroelectronicsMOSFET, N CHANNEL, 650V, 4A, TO-251-3
        RoHS: Compliant
        1382
        • 1:$2.2200
        • 10:$1.8800
        • 100:$1.4500
        • 500:$1.2900
        • 1000:$1.0100
        • 3000:$0.8960
        • 9000:$0.8630
        STU6N65M2
        DISTI # 2460384
        STMicroelectronicsMOSFET, N CHANNEL, 650V, 4A, TO-251-3
        RoHS: Compliant
        1406
        • 5:£1.0500
        • 25:£0.9490
        • 100:£0.7310
        • 250:£0.6880
        • 500:£0.6450
        图片 型号 描述
        STU6N65M2-S

        Mfr.#: STU6N65M2-S

        OMO.#: OMO-STU6N65M2-S

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        全新原装
        可用性
        库存:
        Available
        订购:
        5500
        输入数量:
        STU6N65M2的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$0.81
        US$0.81
        10
        US$0.77
        US$7.72
        100
        US$0.73
        US$73.16
        500
        US$0.69
        US$345.45
        1000
        US$0.65
        US$650.30
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