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IPD65R600E6

IPD65R600E6
Mfr. #:
IPD65R600E6
制造商:
Rochester Electronics, LLC
描述:
Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP000800216)
生命周期:
制造商新产品。
数据表:
IPD65R600E6 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
英飞凌
产品分类
FET - 单
系列
CoolMOS E6
打包
卷轴
部分别名
IPD65R600E6BTMA1 IPD65R600E6XT SP000800216
单位重量
0.139332 oz
安装方式
贴片/贴片
商品名
酷摩
包装盒
TO-252-3
技术
硅
通道数
1 Channel
晶体管型
1 N-Channel
钯功耗
63 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
7.3 A
Vds-漏-源-击穿电压
700 V
Rds-On-Drain-Source-Resistance
540 mOhms
晶体管极性
N通道
Tags
IPD65R600E6, IPD65R600E, IPD65R60, IPD65R6, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
IPD65R600E6BTMA1
DISTI # IPD65R600E6BTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 7.3A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD65R600E6BTMA1
    DISTI # IPD65R600E6BTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 7.3A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD65R600E6BTMA1
      DISTI # IPD65R600E6BTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 650V 7.3A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPD65R600E6ATMA1
        DISTI # IPD65R600E6ATMA1-ND        		Infineon Technologies AGMOSFET N-CH 650V 7.3A TO252-3
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape & Reel (TR)        		Temporarily Out of Stock
        • 2500:$0.6836
        IPD65R600E6
        DISTI # SP000800216        		Infineon Technologies AGTrans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP000800216)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel        		Europe - 2500
        • 2500:€0.9789
        • 5000:€0.8209
        • 10000:€0.6859
        • 15000:€0.5979
        • 25000:€0.5599
        IPD65R600E6ATMA1
        DISTI # IPD65R600E6ATMA1        		Infineon Technologies AGTrans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R600E6ATMA1)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
        • 2500:$0.6389
        • 5000:$0.6159
        • 10000:$0.5939
        • 15000:$0.5739
        • 25000:$0.5639
        IPD65R600E6ATMA1
        DISTI # SP001117096        		Infineon Technologies AGTrans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP001117096)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel        		Europe - 0
        • 2500:€0.8209
        • 5000:€0.6719
        • 10000:€0.6159
        • 15000:€0.5679
        • 25000:€0.5279
        IPD65R600E6Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
        RoHS: Compliant        		35500
        • 1000:$0.5400
        • 500:$0.5700
        • 100:$0.5900
        • 25:$0.6200
        • 1:$0.6600
        IPD65R600E6TRInfineon Technologies AG 
        RoHS: Not Compliant        		93
        • 1000:$0.3400
        • 500:$0.3600
        • 100:$0.3800
        • 25:$0.3900
        • 1:$0.4200
        IPD65R600E6ATMA1
        DISTI # 726-IPD65R600E6ATMA1        		Infineon Technologies AGMOSFET N-Ch 700V 7.3A DPAK-20
        • 1:$1.4600
        • 10:$1.2500
        • 100:$0.9550
        • 500:$0.8440
        • 1000:$0.6660
        • 2500:$0.5910
        IPD65R600E6
        DISTI # 726-IPD65R600E6        		Infineon Technologies AGMOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS E6
        RoHS: Compliant        		3
        • 1:$1.4600
        • 10:$1.2500
        • 100:$0.9550
        • 500:$0.8440
        • 1000:$0.6660
        • 2500:$0.5910
        • 10000:$0.5690
        IPD65R600E6BTMA1
        DISTI # N/A        		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
          IPD65R600E6BTMA1
          DISTI # 8235591P          		Infineon Technologies AGMOSFET N-CH 650V 7.3A COOLMOS E6 TO252, RL2120
          • 25:£0.4480
          IPD65R600E6Infineon Technologies AGINSTOCK2166
            IPD65R600E6ATMA1
            DISTI # 2443437            		Infineon Technologies AGMOSFET, N CH, 700V, 7.3A, TO-252-3
            RoHS: Compliant            		0
            • 1:$2.3200
            • 10:$1.9800
            • 100:$1.5200
            • 500:$1.3400
            • 1000:$1.0500
            • 2500:$0.9360
            • 10000:$0.9000
            IPD65R600E6Infineon Technologies AG650V,7.3A,N channel Power MOSFET1700
            • 1:$0.9800
            • 100:$0.8200
            • 500:$0.7200
            • 1000:$0.7000
            IPD65R600E6ATMA1
            DISTI # 2443437            		Infineon Technologies AGMOSFET, N CH, 700V, 7.3A, TO-252-3
            RoHS: Compliant            		0
            • 5:£0.4360
            • 25:£0.4330
            • 100:£0.4310
            • 250:£0.4280
            • 500:£0.4250
            图片 型号 描述
            IPD65R950C6

            Mfr.#: IPD65R950C6

            OMO.#: OMO-IPD65R950C6

            		 MOSFET N-Ch 700V 4.5A DPAK-2
            IPD65R420CFDATMA2

            Mfr.#: IPD65R420CFDATMA2

            OMO.#: OMO-IPD65R420CFDATMA2

            		 MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve
            IPD65R950CFDATMA2

            Mfr.#: IPD65R950CFDATMA2

            OMO.#: OMO-IPD65R950CFDATMA2

            		 MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve
            IPD65R380C6ATMA1

            Mfr.#: IPD65R380C6ATMA1

            OMO.#: OMO-IPD65R380C6ATMA1

            		 MOSFET LOW POWER_LEGACY
            IPD65R650CEAUMA1

            Mfr.#: IPD65R650CEAUMA1

            OMO.#: OMO-IPD65R650CEAUMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 650V 7A TO-252
            IPD65R950CFDATMA1

            Mfr.#: IPD65R950CFDATMA1

            OMO.#: OMO-IPD65R950CFDATMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 650V 3.9A TO-252
            IPD65R250E6.

            Mfr.#: IPD65R250E6.

            OMO.#: OMO-IPD65R250E6--1190

            		 全新原装
            IPD65R380C6

            Mfr.#: IPD65R380C6

            OMO.#: OMO-IPD65R380C6-1190

            		 Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R380C6BTMA1)
            IPD65R420CFDA,65F420A

            Mfr.#: IPD65R420CFDA,65F420A

            OMO.#: OMO-IPD65R420CFDA-65F420A-1190

            		 全新原装
            IPD65R250C6XTMA1

            Mfr.#: IPD65R250C6XTMA1

            OMO.#: OMO-IPD65R250C6XTMA1-INFINEON-TECHNOLOGIES

            		 RF Bipolar Transistors MOSFET N-Ch 700V 16.1A DPAK-2
            可用性
            库存:
            Available
            订购:
            3000
            输入数量:
            IPD65R600E6的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
            参考价格（美元）
            数量
            单价
            小计金额
            1
            US$0.85
            US$0.85
            10
            US$0.81
            US$8.11
            100
            US$0.77
            US$76.82
            500
            US$0.73
            US$362.75
            1000
            US$0.68
            US$682.80
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