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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BSC882N03MSG DISTI # BSC882N03MSG | Infineon | Trans MOSFET N-CH 34V 100A 8-Pin TDSON - Bulk (Alt: BSC882N03MSG) RoHS: Not Compliant Min Qty: 695 Container: Bulk | Americas - 0 | |
| BSC882N03MSGATMA1 DISTI # BSC882N03MSGATMA1 | Infineon | - Bulk (Alt: BSC882N03MSGATMA1) Min Qty: 658 Container: Bulk | Americas - 0 |
|
| BSC882N03MSG | Infineon Technologies | Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, N-Channel, MOSFET RoHS: Compliant | 23996 |
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| BSC882N03MSGATMA1 | Infineon Technologies | Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, N-Channel, MOSFET RoHS: Not Compliant | 35000 |
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| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G |
MOSFET N-Ch 34V 98A TDSON-8 |
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Mfr.#: BSC886N03LSGATMA1 OMO.#: OMO-BSC886N03LSGATMA1 |
MOSFET LV POWER MOS |
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Mfr.#: BSC883N03LSGXT OMO.#: OMO-BSC883N03LSGXT-1190 |
Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) |
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Mfr.#: BSC882N03MS OMO.#: OMO-BSC882N03MS-1190 |
全新原装 |
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Mfr.#: BSC882N03MSG OMO.#: OMO-BSC882N03MSG-1190 |
Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSC883N03MS OMO.#: OMO-BSC883N03MS-1190 |
全新原装 |
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Mfr.#: BSC884N03MSGXT OMO.#: OMO-BSC884N03MSGXT-1190 |
全新原装 |
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Mfr.#: BSC886N03LS G OMO.#: OMO-BSC886N03LS-G-1190 |
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R |
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Mfr.#: BSC889N03LSGE8178 OMO.#: OMO-BSC889N03LSGE8178-1190 |
全新原装 |
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Mfr.#: BSC883N03MS G OMO.#: OMO-BSC883N03MS-G-126 |
IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8 |