T2G6000528-Q3

T2G6000528-Q3
Mfr. #:
T2G6000528-Q3
制造商:
Qorvo
描述:
RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
生命周期:
制造商新产品。
数据表:
T2G6000528-Q3 数据表
交货:
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支付:
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ECAD Model:
更多信息:
T2G6000528-Q3 更多信息
产品属性
属性值
制造商
TriQuint (Qorvo)
产品分类
晶体管 - FET、MOSFET - 单
系列
T2G
打包
托盘
部分别名
1099997
技术
氮化镓碳化硅
晶体管型
HEMT
Tags
T2G6000528-Q, T2G6000, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型号 制造商 描述 库存 价格
T2G6000528-Q3
DISTI # 772-T2G6000528-Q3
QorvoRF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
RoHS: Compliant
291
  • 1:$80.4000
  • 25:$68.0500
  • 100:$57.6000
T2G6000528-Q3 28V
DISTI # 772-T2G6000528-Q328V
QorvoRF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
RoHS: Compliant
75
  • 1:$80.4000
  • 25:$68.0500
  • 100:$57.6000
T2G6000528-Q3EVB3
DISTI # 772-T2G6000528-Q3EV
QorvoRF Development Tools 3-3.3GHz Eval Board
RoHS: Compliant
2
  • 1:$875.0000
T2G6000528-Q3, EVAL BOARD
DISTI # 772-T2G6000528-Q3EB
QorvoRF Development Tools DC-6.0GHz 10 Watt 28V GaN Eval Brd
RoHS: Compliant
0
  • 1:$875.0000
图片 型号 描述
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6000528-Q3

Mfr.#: T2G6000528-Q3

OMO.#: OMO-T2G6000528-Q3

RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
T2G6001528-Q3

Mfr.#: T2G6001528-Q3

OMO.#: OMO-T2G6001528-Q3

RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
T2G6001528-Q3

Mfr.#: T2G6001528-Q3

OMO.#: OMO-T2G6001528-Q3-318

RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL-318

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6001528-SG-EVB

Mfr.#: T2G6001528-SG-EVB

OMO.#: OMO-T2G6001528-SG-EVB-1152

RF Development Tools
T2G6001528-SG, EVAL BOAR

Mfr.#: T2G6001528-SG, EVAL BOAR

OMO.#: OMO-T2G6001528-SG-EVAL-BOAR-1190

全新原装
T2G6003028

Mfr.#: T2G6003028

OMO.#: OMO-T2G6003028-1190

全新原装
T2G6003028-FL-EVB

Mfr.#: T2G6003028-FL-EVB

OMO.#: OMO-T2G6003028-FL-EVB-1190

全新原装
T2G6003028-FS-EVB1

Mfr.#: T2G6003028-FS-EVB1

OMO.#: OMO-T2G6003028-FS-EVB1-1190

全新原装
可用性
库存:
Available
订购:
2000
输入数量:
T2G6000528-Q3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$86.40
US$86.40
10
US$82.08
US$820.80
100
US$77.76
US$7 776.00
500
US$73.44
US$36 720.00
1000
US$69.12
US$69 120.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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