STP18N60DM2

Mfr. #:: STP18N60DM2
制造商:: STMicroelectronics
描述:: MOSFET N-CH 600V 12A
生命周期:: 制造商新产品。
数据表:: STP18N60DM2 数据表
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更多信息:: STP18N60DM2 更多信息 STP18N60DM2 Product Details

产品属性
属性值

Tags: STP18N60, STP18N6, STP18N, STP18, STP1, STP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STP18N60DM2 描述

***Components: In a Tube of 50, N-Channel MOSFET, 12 A, 600 V, 3-Pin TO-220 STMicroelectronics STP18N60DM2

***ical: Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube

***ment14 APAC: MOSFET, N-CH, 600V, 12A, TO-220

***i-Key: MOSFET N-CH 600V 12A

***et Europe: N-channel MDmesh >350 V to 700 V

***ark: Ptd High Voltage

***nell: MOSFET, CAN-N, 600V, 12A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.26ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:90W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)

STP18N60DM2 更多信息

MDmesh DM2 Power MOSFETs: STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

型号	制造商	描述	库存	价格
STP18N60DM2 DISTI # V36:1790_13795921	STMicroelectronics	Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube	0
STP18N60DM2 DISTI # 497-16338-5-ND	STMicroelectronics	MOSFET N-CH 600V 12A RoHS: Compliant Min Qty: 1 Container: Tube	40In Stock	5000:$1.1564 2500:$1.1709 500:$1.5178 100:$1.8473 50:$2.1682 10:$2.2980 1:$2.5600
STP18N60DM2 DISTI # STP18N60DM2	STMicroelectronics	N-channel MDmesh >350 V to 700 V - Rail/Tube (Alt: STP18N60DM2) RoHS: Not Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$1.0539 6000:$1.0759 4000:$1.1259 2000:$1.1799 1000:$1.2379
STP18N60DM2 DISTI # 74Y7917	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$1.0400
STP18N60DM2 DISTI # 511-STP18N60DM2	STMicroelectronics	MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package RoHS: Compliant	997	1:$2.4300 10:$2.0600 100:$1.6500 500:$1.4400 1000:$1.1900 2000:$1.1100 5000:$1.0700
STP18N60DM2	STMicroelectronics	Power Field-Effect Transistor RoHS: Compliant	1000
STP18N60DM2 DISTI # 2531109	STMicroelectronics	MOSFET, N-CH, 600V, 12A, TO-220 RoHS: Compliant	99	5000:$1.8100 2500:$1.8800 1000:$2.0200 500:$2.4300 100:$3.1300 50:$3.4700 1:$4.3100
STP18N60DM2 DISTI # 2531109	STMicroelectronics	MOSFET, N-CH, 600V, 12A, TO-220	99	500:£1.1200 250:£1.2000 100:£1.2900 10:£1.6000 1:£2.1300

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