STGW80V60DF

STGW80V60DF
Mfr. #:
STGW80V60DF
制造商:
STMicroelectronics
描述:
IGBT 600V 120A 469W TO247
生命周期:
制造商新产品。
数据表:
STGW80V60DF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
STGW80V60DF 更多信息 STGW80V60DF Product Details
产品属性
属性值
制造商
意法半导体
产品分类
IGBT - 单
系列
600-650V IGBTs
打包
管子
单位重量
1.340411 oz
安装方式
通孔
包装盒
TO-247-3 Exposed Pad
输入类型
标准
安装型
通孔
供应商-设备-包
TO-247
配置
单身的
最大功率
469W
反向恢复时间trr
60ns
电流收集器 Ic-Max
120A
电压收集器发射极击穿最大值
600V
IGBT型
海沟场停止
电流收集器脉冲Icm
240A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 80A
开关能源
1.8mJ (on), 1mJ (off)
栅极电荷
448nC
Td-on-off-25°C
60ns/220ns
测试条件
400V, 80A, 5 Ohm, 15V
钯功耗
469 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
集电极-发射极-电压-VCEO-Max
600 V
集电极-发射极-饱和-电压
1.85 V
25-C 时的连续集电极电流
120 A
栅极-发射极-漏电流
250 nA
最大栅极发射极电压
20 V
连续集电极电流 Ic-Max
80 A
Tags
STGW80, STGW8, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247
***ure Electronics
V Series 600 V 80 A Flange Mount Trench Gate Field-Stop IGBT - TO-247
***p One Stop Japan
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 600V 120A 3-Pin TO-247 Tube
***ied Electronics & Automation
IGBT N-Ch 600V 80A High-Speed TO247
***ronik
IGBT 600V 80A 1,85V TO247-3
***i-Key
IGBT 600V 120A 469W TO247
***ark
Igbt, Single, 600V, 120A, To-247-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 600V, 120A, TO-247-3; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:V Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
IGBT, SINGOLO, 600V, 120A, TO-247-3; Corrente di Collettore CC:120A; Tensione Saturaz Collettore-Emettitore Vce(on):1.85V; Dissipazione di Potenza Pd:469W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:V Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
型号 制造商 描述 库存 价格
STGW80V60DF
DISTI # 30607178
STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
1280
  • 1200:$4.3223
  • 100:$4.9215
  • 50:$5.4188
  • 10:$5.4698
  • 5:$6.0435
STGW80V60DF
DISTI # 497-14058-5-ND
STMicroelectronicsIGBT 600V 120A 469W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
596In Stock
  • 1020:$4.0500
  • 510:$4.6500
  • 120:$5.3400
  • 30:$6.1500
  • 1:$7.1400
STGW80V60DF
DISTI # V36:1790_06560792
STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    STGW80V60DF
    DISTI # STGW80V60DF
    STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin TO-247 Tube (Alt: STGW80V60DF)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 250:€3.8000
    • 100:€4.3800
    • 50:€4.7100
    • 10:€5.0500
    • 5:€5.6600
    • 1:€6.2600
    STGW80V60DF
    DISTI # STGW80V60DF
    STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80V60DF)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 6000:$3.7900
    • 3600:$3.8900
    • 2400:$3.9900
    • 1200:$4.1900
    • 600:$4.3900
    STGW80V60DF
    DISTI # 98Y2478
    STMicroelectronicsIGBT, SINGLE, 600V, 120A, TO-247-3,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes559
    • 500:$4.7000
    • 250:$5.1600
    • 100:$5.3900
    • 50:$5.8100
    • 25:$6.2200
    • 10:$6.5200
    • 1:$7.2100
    STGW80V60DF
    DISTI # 511-STGW80V60DF
    STMicroelectronicsIGBT Transistors Trench gate V series 600V 80A HiSpd
    RoHS: Compliant
    714
    • 1:$7.1400
    • 10:$6.4600
    • 25:$6.1600
    • 100:$5.3400
    • 250:$5.1100
    • 500:$4.6500
    STGW80V60DF
    DISTI # 7925827P
    STMicroelectronicsIGBT N-CH 600V 80A HIGH-SPEED TO247, TU315
    • 250:£3.6900
    • 50:£4.4600
    • 20:£4.5700
    • 10:£4.6700
    STGW80V60DF
    DISTI # 2629742
    STMicroelectronicsIGBT, SINGLE, 600V, 120A, TO-247-3
    RoHS: Compliant
    559
    • 1020:$6.1500
    • 510:$7.0500
    • 120:$8.0900
    • 30:$9.3300
    • 1:$10.8200
    STGW80V60DF
    DISTI # 2629742
    STMicroelectronicsIGBT, SINGLE, 600V, 120A, TO-247-3559
    • 100:£3.8400
    • 50:£4.1300
    • 10:£4.4300
    • 5:£5.1300
    • 1:£5.9300
    图片 型号 描述
    STGW8M120DF3

    Mfr.#: STGW8M120DF3

    OMO.#: OMO-STGW8M120DF3

    IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
    STGW80V60DF

    Mfr.#: STGW80V60DF

    OMO.#: OMO-STGW80V60DF

    IGBT Transistors Trench gate V series 600V 80A HiSpd
    STGW80H65DFB-4

    Mfr.#: STGW80H65DFB-4

    OMO.#: OMO-STGW80H65DFB-4

    IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
    STGW80H65FB

    Mfr.#: STGW80H65FB

    OMO.#: OMO-STGW80H65FB

    IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
    STGW80H65DFB

    Mfr.#: STGW80H65DFB

    OMO.#: OMO-STGW80H65DFB

    IGBT Transistors Trench gte FieldStop IGBT 650V 80A
    STGW80H65FB-4

    Mfr.#: STGW80H65FB-4

    OMO.#: OMO-STGW80H65FB-4

    IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
    STGW80V60F

    Mfr.#: STGW80V60F

    OMO.#: OMO-STGW80V60F

    IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
    STGW80H65FB-4

    Mfr.#: STGW80H65FB-4

    OMO.#: OMO-STGW80H65FB-4-STMICROELECTRONICS

    IGBT Transistors IGBT & Power Bipola
    STGW80V60F

    Mfr.#: STGW80V60F

    OMO.#: OMO-STGW80V60F-STMICROELECTRONICS

    IGBT Transistors IGBT & Power Bipola
    STGW8M120DF3

    Mfr.#: STGW8M120DF3

    OMO.#: OMO-STGW8M120DF3-STMICROELECTRONICS

    TRENCH GATE FIELD-STOP IGBT M SE
    可用性
    库存:
    Available
    订购:
    5000
    输入数量:
    STGW80V60DF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$5.68
    US$5.68
    10
    US$5.40
    US$54.01
    100
    US$5.12
    US$511.65
    500
    US$4.83
    US$2 416.15
    1000
    US$4.55
    US$4 548.00
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