STGW40M120DF3

STGW40M120DF3
Mfr. #:
STGW40M120DF3
制造商:
STMicroelectronics
描述:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
生命周期:
制造商新产品。
数据表:
STGW40M120DF3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STGW40M120DF3 更多信息 STGW40M120DF3 Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
1200 V
集电极-发射极饱和电压:
1.85 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
80 A
Pd - 功耗:
468 W
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
STGW40M120DF3
打包:
管子
连续集电极电流 Ic 最大值:
40 A
品牌:
意法半导体
栅极-发射极漏电流:
250 nA
产品类别:
IGBT晶体管
出厂包装数量:
600
子类别:
IGBT
单位重量:
1.340411 oz
Tags
STGW40, STGW4, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
***ment14 APAC
IGBT, SINGLE, 1.2KV, 80A, TO-247-3
STMicroelectronics M Series Trench Gate Field-Stop IGBTs
STMicroelectronics M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. They represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.Learn More
型号 制造商 描述 库存 价格
STGW40M120DF3
DISTI # V99:2348_17652388
STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
3
  • 1:$5.2310
STGW40M120DF3
DISTI # V36:1790_06560766
STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    STGW40M120DF3
    DISTI # 497-15002-5-ND
    STMicroelectronicsIGBT 1200V 80A 468W TO-247
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Temporarily Out of Stock
    • 600:$8.1788
    STGW40M120DF3
    DISTI # 30600295
    STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    10
    • 10:$6.8085
    • 4:$6.8978
    STGW40M120DF3
    DISTI # 25950167
    STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    3
    • 2:$5.6233
    STGW40M120DF3
    DISTI # STGW40M120DF3
    STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW40M120DF3)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 600:$6.6900
    • 1200:$6.3900
    • 2400:$6.0900
    • 3600:$5.7900
    • 6000:$5.6900
    STGW40M120DF3
    DISTI # STGW40M120DF3
    STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube (Alt: STGW40M120DF3)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1:€12.1100
    • 5:€9.9700
    • 10:€8.0200
    • 50:€7.5100
    • 100:€6.4900
    • 250:€5.0300
    STGW40M120DF3
    DISTI # 26Y5819
    STMicroelectronicsPTD HIGH VOLTAGE0
    • 1:$5.6300
    STGW40M120DF3
    DISTI # 511-STGW40M120DF3
    STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
    RoHS: Compliant
    0
    • 1:$10.7000
    • 10:$9.6700
    • 25:$9.2200
    • 100:$8.0100
    • 250:$7.6500
    • 500:$6.9700
    STGW40M120DF3
    DISTI # STGW40M120DF3
    STMicroelectronics1200V 80A 468W TO247
    RoHS: Not Compliant
    35
    • 5:€5.7500
    • 30:€5.3500
    • 120:€5.1500
    • 300:€4.9500
    STGW40M120DF3STMicroelectronicsInsulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant
    Europe - 296
      STGW40M120DF3
      DISTI # IGBT1560
      STMicroelectronicsIGBT 1200V 40A 1,85VTO-247Stock DE - 0Stock HK - 0Stock US - 0
      • 600:$5.9200
      STGW40M120DF3
      DISTI # 2470028
      STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-247-3
      RoHS: Compliant
      0
      • 100:£6.2400
      • 50:£6.7100
      • 10:£7.1700
      • 5:£8.3200
      • 1:£8.8800
      STGW40M120DF3
      DISTI # 2470028
      STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-247-3
      RoHS: Compliant
      0
      • 500:$10.5000
      • 250:$11.5300
      • 100:$12.0700
      • 25:$13.8900
      • 10:$14.5700
      • 1:$16.1200
      图片 型号 描述
      STGW25M120DF3

      Mfr.#: STGW25M120DF3

      OMO.#: OMO-STGW25M120DF3

      IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
      STGW25M120DF3

      Mfr.#: STGW25M120DF3

      OMO.#: OMO-STGW25M120DF3-STMICROELECTRONICS

      IGBT 1200V 50A 375W
      可用性
      库存:
      Available
      订购:
      1500
      输入数量:
      STGW40M120DF3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$10.70
      US$10.70
      10
      US$9.67
      US$96.70
      25
      US$9.22
      US$230.50
      100
      US$8.01
      US$801.00
      250
      US$7.65
      US$1 912.50
      500
      US$6.97
      US$3 485.00
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