IPB80N06S4L05ATMA2

Mfr. #:: IPB80N06S4L05ATMA2
制造商:: Infineon Technologies
描述:: MOSFET N-CH 60V 80A TO263-3
生命周期:: 制造商新产品。
数据表:: IPB80N06S4L05ATMA2 数据表
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ECAD Model:
更多信息:: IPB80N06S4L05ATMA2 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: IPB80N06S4L

打包: 卷轴

部分别名: IPB80N06S4L-05 IPB80N06S4L05XT SP001028720

单位重量: 0.068654 oz

包装盒: TO-263-3

技术: 硅

通道数: 1 Channel

晶体管型: 1 N-Channel

Id 连续漏极电流: 80 A

Vds-漏-源-击穿电压: 60 V

Rds-On-Drain-Source-Resistance: 4.8 mOhms

晶体管极性: N通道

Tags: IPB80N06S4L0, IPB80N06S4L, IPB80N06S4, IPB80N06, IPB80N0, IPB80N, IPB8, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB80N06S4L05ATMA2 描述

***Components: In a Pack of 20, N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon IPB80N06S4L05ATMA2

***ical: Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) TO-263 T/R

***et Europe: Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) TO-263

***i-Key: MOSFET N-CH 60V 80A TO263-3

***ronik: N-CH 60V 80A 4,8mOhm TO263

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

IPB80N06S4L05ATMA2 更多信息

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

Market price

型号	制造商	描述	库存	价格
IPB80N06S4L05ATMA2 DISTI # IPB80N06S4L05ATMA2-ND	Infineon Technologies AG	MOSFET N-CH 60V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$0.7750
IPB80N06S4L05ATMA2 DISTI # IPB80N06S4L05ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S4L05ATMA2) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.6759 2000:$0.6519 4000:$0.6279 6000:$0.6069 10000:$0.5959
IPB80N06S4L05ATMA2 DISTI # 726-IPB80N06S4L05ATM	Infineon Technologies AG	MOSFET N-Ch 60V 80A D2PAK-2 RoHS: Compliant	0	1:$1.5400 10:$1.3100 100:$1.0100 500:$0.8930 1000:$0.7050 2000:$0.6250 10000:$0.6020
IPB80N06S4L-05 DISTI # 726-IPB80N06S4L-05	Infineon Technologies AG	MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2 RoHS: Compliant	211	1:$1.4300 10:$1.2200 100:$0.9330 500:$0.8240 1000:$0.6510 2000:$0.5770 10000:$0.5560

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