TGF2952

TGF2952
Mfr. #:
TGF2952
制造商:
Qorvo
描述:
RF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm
生命周期:
制造商新产品。
数据表:
TGF2952 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
TGF2952 更多信息
产品属性
属性值
制造商
TriQuint (Qorvo)
产品分类
晶体管 - FET、MOSFET - 单
打包
胡扯
部分别名
1111797
安装方式
贴片/贴片
工作温度范围
- 65 C to + 150 C
包装盒
技术
氮化镓碳化硅
配置
单身的
晶体管型
HEMT
获得
20.4 dB
输出功率
38.4 dBm
钯功耗
10.5 W
最高工作温度
+ 150 C
最低工作温度
- 65
工作频率
15 GHz
Id 连续漏极电流
480 mA
Vds-漏-源-击穿电压
32 V
晶体管极性
N通道
最大漏栅电压
100 V
Tags
TGF295, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型号 制造商 描述 库存 价格
TGF2952
DISTI # 772-TGF2952
QorvoRF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm
RoHS: Compliant
0
  • 50:$30.2800
  • 100:$26.1900
  • 250:$24.6200
1111797
DISTI # TGF2952
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$17.1900
图片 型号 描述
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02

RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2936

Mfr.#: TGF2936

OMO.#: OMO-TGF2936

RF JFET Transistors DC-25GHz 10Watt NF 1.3dB GaN
TGF2929-FL

Mfr.#: TGF2929-FL

OMO.#: OMO-TGF2929-FL

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2022-24

Mfr.#: TGF2022-24

OMO.#: OMO-TGF2022-24-318

RF JFET Transistors DC-20GHz 2.4mm Pwr pHEMT (0.35um)
TGF2021-04

Mfr.#: TGF2021-04

OMO.#: OMO-TGF2021-04-318

RF JFET Transistors DC-12GHz 4mm Pwr pHEMT (0.35um)
TGF2160

Mfr.#: TGF2160

OMO.#: OMO-TGF2160-318

RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
TGF-154-CC-CC12VDC

Mfr.#: TGF-154-CC-CC12VDC

OMO.#: OMO-TGF-154-CC-CC12VDC-1190

全新原装
TGF4240-SCC

Mfr.#: TGF4240-SCC

OMO.#: OMO-TGF4240-SCC-1152

RF JFET Transistors DC-12.0GHz 1.4 Watt HFET
TGF3162

Mfr.#: TGF3162

OMO.#: OMO-TGF3162-1190

ARBITRARY FUNCTION GENERATOR, 2CH/160MHZ
TGF10-07870787-039

Mfr.#: TGF10-07870787-039

OMO.#: OMO-TGF10-07870787-039-LEADER-TECH

Thermal Gap Filler/White Grey 1.0W/m-K
可用性
库存:
Available
订购:
4500
输入数量:
TGF2952的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$36.93
US$36.93
10
US$35.08
US$350.84
100
US$33.24
US$3 323.70
500
US$31.39
US$15 695.25
1000
US$29.54
US$29 544.00
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