TGF2018

TGF2018
Mfr. #:
TGF2018
制造商:
Qorvo
描述:
RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm
生命周期:
制造商新产品。
数据表:
TGF2018 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
TGF2018 更多信息
产品属性
属性值
制造商
TriQuint (Qorvo)
产品分类
晶体管 - FET、MOSFET - 单
系列
转化生长因子
打包
凝胶包
部分别名
1098412
安装方式
贴片/贴片
工作温度范围
- 65 C to + 150 C
技术
砷化镓
配置
单身的
晶体管型
pHEMT
获得
14 dB
钯功耗
0.64 W
最高工作温度
+ 150 C
最低工作温度
- 65 C
工作频率
20 GHz
Id 连续漏极电流
58 mA
Vds-漏-源-击穿电压
8 V
正向跨导最小值
70 mS
VGS-栅极-源极击穿电压
- 15 V
最大漏栅电压
12 V
NF-噪声系数
1 dB
P1dB-压缩点
22 dBm
Tags
TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF2018/25 Heterojunction Power FETs
Qorvo TGF2018/25 High-Efficiency Heterojunction Power FETs operate from DC to 20 GHz and are designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB  and 55% power-added efficiency at 1 dB compression. The TGF2025 typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes these appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More
Triquint GaAs pHEMt Low Noise Amplifiers
TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More
型号 制造商 描述 库存 价格
TGF2018
DISTI # 772-TGF2018
QorvoRF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm
RoHS: Compliant
200
  • 100:$5.8300
  • 300:$5.4500
  • 500:$5.0900
  • 1000:$4.7600
图片 型号 描述
TGF10-07870787-039

Mfr.#: TGF10-07870787-039

OMO.#: OMO-TGF10-07870787-039

Thermal Interface Products 1W/m-K 200*200*1 TGF10 White Gray
TGF20-07870787-020

Mfr.#: TGF20-07870787-020

OMO.#: OMO-TGF20-07870787-020

Thermal Interface Products 2W/m-K 200*200*0.5 TGF20 Light Blue
TGF2978-SM

Mfr.#: TGF2978-SM

OMO.#: OMO-TGF2978-SM-318

RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
TGF2040

Mfr.#: TGF2040

OMO.#: OMO-TGF2040-318

RF JFET Transistors DC-20GHz NF 1.1dB Gain 13dB P1dB 26dBm
TGF2060

Mfr.#: TGF2060

OMO.#: OMO-TGF2060-318

RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm
TGF2957

Mfr.#: TGF2957

OMO.#: OMO-TGF2957-318

RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
TGF2929-FL

Mfr.#: TGF2929-FL

OMO.#: OMO-TGF2929-FL-319

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2021-12-XCC-2

Mfr.#: TGF2021-12-XCC-2

OMO.#: OMO-TGF2021-12-XCC-2-1190

全新原装
TGF2023-02

Mfr.#: TGF2023-02

OMO.#: OMO-TGF2023-02-1152

RF JFET Transistors 2.5mm GaN Discrete
TGF4042

Mfr.#: TGF4042

OMO.#: OMO-TGF4042-1190

ARBITRARY/FUNCTION/PULSE GEN, 2CH, 40MHZ
可用性
库存:
Available
订购:
3000
输入数量:
TGF2018的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$7.14
US$7.14
10
US$6.78
US$67.83
100
US$6.43
US$642.60
500
US$6.07
US$3 034.50
1000
US$5.71
US$5 712.00
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