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PD84001

PD84001
Mfr. #:
PD84001
制造商:
STMicroelectronics
描述:
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
生命周期:
制造商新产品。
数据表:
PD84001 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PD84001 DatasheetPD84001 Datasheet (P4-P6)PD84001 Datasheet (P7-P9)PD84001 Datasheet (P10-P12)PD84001 Datasheet (P13-P15)PD84001 Datasheet (P16-P18)
ECAD Model:
更多信息:
PD84001 更多信息 PD84001 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
射频 MOSFET 晶体管
RoHS：
Y
晶体管极性：
N通道
技术：
硅
Id - 连续漏极电流：
1.5 A
Vds - 漏源击穿电压：
18 V
获得：
15 dB
输出功率：
1 W
最低工作温度：
- 65 C
最高工作温度：
+ 150 C
安装方式：
贴片/贴片
包装/案例：
SOT-89-4
打包：
卷轴
配置：
单身的
工作频率：
1 GHz
系列：
PD84001
类型：
射频功率MOSFET
品牌：
意法半导体
频道模式：
增强
湿气敏感：
是的
Pd - 功耗：
6 W
产品类别：
射频 MOSFET 晶体管
出厂包装数量：
2500
子类别：
MOSFET
Vgs - 栅源电压：
15 V
单位重量：
0.004603 oz
Tags
PD84001, PD8400, PD84, PD8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
PD84001 Series 870 MHz 6 W 18 V N-Channel RF Power Transistor - SOT-89
***et
Transistor RF FET N-CH 18V 1.5A 870MHz 4-Pin SOT-89 T/R
***ark
N CHANNEL RF POWER TRANSISTOR, LdmoST, 18V, 1.5A, SOT-89; Drain Source Voltage Vds:18V; Continuous Drain Current Id:1.5A; Power Dissipation:6W; Operating Frequency Min:-; Operating Frequency Max:1GHz; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
***r Electronics
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 40 V 4 W Surface Mount LDMOS RF Mosfet - SOT-89
***icroelectronics
4W 13.6V 870MHz LDMOS in SOT89 plastic package
***roFlash
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ark
N CHANNEL RF POWERT TRANSISTOR, LdmoST, 40V, 2A, SOT-89; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation:6W; Operating Frequency Min:-; Operating Frequency Max:-; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
***p One Stop Global
Trans RF MOSFET N-CH 25V 2A 4-Pin(3+Tab) SOT-89 T/R
*** Electronic Components
RF MOSFET Transistors RF PWR transistor LdmoST plastic fam
***nell
MOSFET, RF, N-CH, 25V, 2A, SOT-89-3; Drain Source Voltage Vds: 25V; Continuous Drain Current Id: 2A; Power Dissipation Pd: 6W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: SOT-89; No. of Pins:
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***hard Electronics
ON SEMICONDUCTOR PCP1402-TD-H MOSFET Transistor, N Channel, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V
***ure Electronics
Single N-Channel 250 V 3.5 W 4.2 nC Silicon Surface Mount Mosfet - SOT-89
***emi
Single N-Channel Power MOSFET, 250V, 1.2A, 2.4Ω
***ical
Trans MOSFET N-CH 250V 1.2A 4-Pin(3+Tab) SOT-89 T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:1.2A; On Resistance Rds(On):1.8Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V Rohs Compliant: Yes
***nell
NCH 10V DRIVE SERIES; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.2A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 3.5W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***et
Trans MOSFET P-CH 100V 1.5A 3-Pin PCP
***hard Electronics
2SJ670 - P-CHANNEL SILICON MOSFE
***nell
MOSFET, P CH, 100V, 1.5A, SOT89; Transistor Polarity:P-Channel; Current Id Max:-1.5A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:20V; Power Dissipation:3.5W; Transistor Case Style:SOT-89; No. of Pins:3
***ure Electronics
N-Channel 60 V 3.2 A 1 W Surface Mount OptiMOS™ Small-Signal-Transistor - SOT-89
***ow.cn
Trans MOSFET N-CH 60V 3.2A Automotive 4-Pin(3+Tab) SOT-89 T/R
***nell
MOSFET, AEC-Q101, N-CH, 60V, SOT-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 1W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.2 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 2.1 / Rise Time ns = 2.6 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 5.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1
***p One Stop Global
Trans MOSFET P-CH 250V 0.19A Automotive 4-Pin(3+Tab) SOT-89 T/R
***ure Electronics
Single P-Channel 250 V 12 Ohm 4.9 nC SIPMOS® Small Signal Mosfet - SOT-89
***ment14 APAC
MOSFET, P-CH, -250V, -0.19A, SOT-89-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-190mA; Source Voltage Vds:-250V; On
***nell
MOSFET, P-CH, -250V, -0.19A, SOT-89-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -190mA; Drain Source Voltage Vds: -250V; On Resistance Rds(on): 7.7ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 1W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 190 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 50 / Rise Time ns = 5.2 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 4.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1
型号 制造商 描述 库存 价格
PD84001
DISTI # V72:2272_17706727		STMicroelectronicsTrans RF MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R
RoHS: Compliant		1839
  • 1000:$1.2501
  • 500:$1.4340
  • 250:$1.6263
  • 100:$1.6303
  • 25:$1.9179
  • 10:$1.9542
  • 1:$2.2149
PD84001
DISTI # 497-8294-1-ND		STMicroelectronicsFET RF 18V 870MHZ
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3360In Stock
  • 1000:$1.5372
  • 500:$1.8184
  • 100:$2.1745
  • 10:$2.6620
  • 1:$2.9500
PD84001
DISTI # 497-8294-6-ND		STMicroelectronicsFET RF 18V 870MHZ
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3360In Stock
  • 1000:$1.5372
  • 500:$1.8184
  • 100:$2.1745
  • 10:$2.6620
  • 1:$2.9500
PD84001
DISTI # 497-8294-2-ND		STMicroelectronicsFET RF 18V 870MHZ
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.3559
  • 2500:$1.4014
PD84001
DISTI # 30299227		STMicroelectronicsTrans RF MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R
RoHS: Compliant		2500
  • 2500:$1.0944
PD84001
DISTI # 26931638		STMicroelectronicsTrans RF MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R
RoHS: Compliant		1839
  • 1000:$1.2501
  • 500:$1.4340
  • 250:$1.6263
  • 100:$1.6303
  • 25:$1.9179
  • 10:$1.9542
  • 6:$2.2149
PD84001
DISTI # PD84001		STMicroelectronicsTrans MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R - Tape and Reel (Alt: PD84001)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$1.2900
  • 5000:$1.2900
  • 10000:$1.1900
  • 15000:$1.0900
  • 25000:$1.0900
PD84001
DISTI # PD84001		STMicroelectronicsTrans MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R (Alt: PD84001)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€1.2749
  • 5000:€1.0629
  • 10000:€0.9809
  • 15000:€0.9109
  • 25000:€0.8499
PD84001
DISTI # PD84001		STMicroelectronicsTrans MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R (Alt: PD84001)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    PD84001
    DISTI # 06X0640    		STMicroelectronicsRF FET Transistor, 18 V, 1.5 A, 6 W, 1 GHz, SOT-89 RoHS Compliant: Yes915
    • 1:$2.8200
    • 10:$2.4300
    • 25:$2.2800
    • 50:$2.1200
    • 100:$1.9700
    • 250:$1.8600
    • 500:$1.7600
    • 1000:$1.4800
    PD84001
    DISTI # 511-PD84001    		STMicroelectronicsRF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
    RoHS: Compliant    		2272
    • 1:$2.6800
    • 10:$2.2800
    • 100:$1.8200
    • 500:$1.6000
    • 1000:$1.3200
    • 2500:$1.2300
    • 5000:$1.1900
    PD84001
    DISTI # 9172738P    		STMicroelectronicsRF POWER LDMOS TRANSISTOR 1W SOT-89, RL4960
    • 25:£0.7140
    PD84001
    DISTI # PD84001    		STMicroelectronicsRF POWER TRANSISTOR
    RoHS: Compliant    		0
    • 2500:$1.3300
    PD84001STMicroelectronicsINSTOCK2891
      PD84001
      DISTI # 2341737      		STMicroelectronicsMOSFET, RF, N-CH, 18V, 1.5A, SOT-89-3
      RoHS: Compliant      		915
      • 1:$4.2500
      • 10:$3.6200
      • 100:$2.8800
      • 500:$2.5400
      • 1000:$2.0900
      • 2500:$1.9500
      • 5000:$1.8800
      • 10000:$1.8100
      PD84001
      DISTI # C1S730200501233      		STMicroelectronicsTrans RF MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R
      RoHS: Compliant      		2500
      • 2500:$1.1600
      PD84001
      DISTI # C1S730200364094      		STMicroelectronicsTrans RF MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R
      RoHS: Compliant      		1839
      • 250:$1.6263
      • 100:$1.6303
      • 25:$1.9179
      • 10:$1.9542
      • 1:$2.2149
      PD84001
      DISTI # 2341737      		STMicroelectronicsMOSFET, RF, N-CH, 18V, 1.5A, SOT-89-3
      RoHS: Compliant      		915
      • 1:£2.0700
      • 10:£1.6800
      • 100:£1.4000
      • 250:£1.3400
      • 500:£1.2300
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      		 全新原装
      可用性
      库存:
      Available
      订购:
      1984
      输入数量:
      PD84001的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$2.68
      US$2.68
      10
      US$2.28
      US$22.80
      100
      US$1.82
      US$182.00
      500
      US$1.60
      US$800.00
      1000
      US$1.32
      US$1 320.00
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