IRF7902TRPBF

IRF7902TRPBF
Mfr. #:
IRF7902TRPBF
制造商:
Infineon Technologies
描述:
MOSFET MOSFT DUAL NCh 30V 9.7A
生命周期:
制造商新产品。
数据表:
IRF7902TRPBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7902TRPBF DatasheetIRF7902TRPBF Datasheet (P4-P6)IRF7902TRPBF Datasheet (P7-P9)IRF7902TRPBF Datasheet (P10)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
SO-8
通道数:
2 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
30 V
Id - 连续漏极电流:
9.7 A
Rds On - 漏源电阻:
18.7 mOhms
Vgs - 栅源电压:
20 V
Qg - 门电荷:
4.6 nC
Pd - 功耗:
2.0 W
配置:
双重的
打包:
卷轴
高度:
1.75 mm
长度:
4.9 mm
晶体管类型:
2 N-Channel
宽度:
3.9 mm
品牌:
英飞凌科技
产品类别:
MOSFET
出厂包装数量:
4000
子类别:
MOSFET
第 # 部分别名:
SP001563890
单位重量:
0.019048 oz
Tags
IRF7902TRP, IRF7902T, IRF7902, IRF790, IRF79, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-CH 30V 6.4A/9.7A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 30 V 22.6 mOhm 4.6 nC HEXFET® Power Mosfet -SOIC-8
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***ark
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):14.4mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:8; Leaded Process Compatible:Yes; Package / Case:SO-8
***Yang
Transistor MOSFET Array Dual N-CH 30V 7.8A/8.9A 8-Pin SOIC T/R - Tape and Reel
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):17.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***et Japan
Transistor MOSFET Array Dual N-CH 30V 9.1A/11A 8-Pin SOIC T/R
***ure Electronics
Dual N-Channel 30 V 20.5/13.7 mOhm 10/21 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 30V,ID 9.1 A (Control FET), 11 A (Synchronous FET),SO-8
***ineon SCT
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***nell
MOSFET,NN CH,30V,9.1A,SO8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0137ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
***Yang
Transistor MOSFET Array Dual N-CH 30V 7.6A/11A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 30 V 16.2 mOhm 7.5 nC HEXFET® Power Mosfet - SOIC-8
***ark
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.8mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:8; Leaded Process Compatible:Yes; Package / Case:SO-8
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***nell
MOSFET, DUAL N CH, 30V, 11A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0086ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.25V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***et
Transistor MOSFET Array Dual N-CH 30V 7.2A 8-Pin SOIC T/R
***p One Stop
Trans MOSFET N-CH 30V 7.2A 8-Pin SO T/R
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ark
Mosfet, Dual, N-Ch, 30V, 6.8A Rohs Compliant: Yes
***ment14 APAC
MOSFET, DUAL, N-CH, 30V, 6.8A;
***ure Electronics
Dual N-Channel 30 V 1.42 W 10.5 nC Enhancement Mode Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 10A Automotive 8-Pin SO T/R
***(Formerly Allied Electronics)
Dual N-Channel Enhancement MOSFET SOIC8
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 25±V VGS
*** Stop Electro
Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Electronics
MOSFET MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K
***ark
Drain Source Voltage Vds:30V; Continuous Drain Current Id:10A; Product Range:-; Automotive Qualification Standard:-; Msl:- Rohs Compliant: No
***et Japan
Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin SOIC T/R
***icroelectronics
Dual N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET (TM); V Power MOSFET
***ark
Mosfet, Dual N-Ch, 30V, 10A, Soic; Channel Type:n Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:10A; Continuous Drain Current Id P Channel:10A Rohs Compliant: Yes
型号 制造商 描述 库存 价格
IRF7902TRPBF
DISTI # 21773827
Infineon Technologies AGTrans MOSFET N-CH 30V 6.4A/9.7A 8-Pin SOIC T/R4000
  • 4000:$0.4541
IRF7902TRPBF
DISTI # IRF7902TRPBFCT-ND
Infineon Technologies AGMOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2817In Stock
  • 1000:$0.5568
  • 500:$0.6900
  • 100:$0.8730
  • 10:$1.0890
  • 1:$1.2300
IRF7902TRPBF
DISTI # IRF7902TRPBFDKR-ND
Infineon Technologies AGMOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2817In Stock
  • 1000:$0.5568
  • 500:$0.6900
  • 100:$0.8730
  • 10:$1.0890
  • 1:$1.2300
IRF7902TRPBF
DISTI # IRF7902TRPBFTR-ND
Infineon Technologies AGMOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 4000:$0.5083
IRF7902TRPBF
DISTI # C1S322000486698
Infineon Technologies AGTrans MOSFET N-CH 30V 6.4A/9.7A 8-Pin SOIC T/R
RoHS: Compliant
4000
  • 4000:$0.4580
IRF7902TRPBF
DISTI # IRF7902TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 6.4A/9.7A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7902TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
    IRF7902TRPBF
    DISTI # IRF7902TRPBF
    Infineon Technologies AGTrans MOSFET N-CH 30V 6.4A/9.7A 8-Pin SOIC T/R (Alt: IRF7902TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel
    Asia - 0
      IRF7902TRPBF
      DISTI # SP001563890
      Infineon Technologies AGTrans MOSFET N-CH 30V 6.4A/9.7A 8-Pin SOIC T/R (Alt: SP001563890)
      RoHS: Compliant
      Min Qty: 4000
      Container: Tape and Reel
      Europe - 0
      • 4000:€0.4199
      • 8000:€0.3429
      • 16000:€0.3149
      • 24000:€0.2899
      • 40000:€0.2699
      IRF7902TRPBF
      DISTI # 70018975
      Infineon Technologies AGMOSFET,DUAL N-CHANNEL,30V,9.7A,SO-8
      RoHS: Compliant
      0
      • 4000:$1.2300
      • 8000:$1.2050
      • 20000:$1.1690
      • 40000:$1.1190
      • 100000:$1.0460
      IRF7902TRPBF
      DISTI # 942-IRF7902TRPBF
      Infineon Technologies AGMOSFET MOSFT DUAL NCh 30V 9.7A
      RoHS: Compliant
      0
        IRF7902TRPBFInternational Rectifier 
        RoHS: Not Compliant
        4000
        • 1000:$0.3800
        • 500:$0.4000
        • 100:$0.4200
        • 25:$0.4400
        • 1:$0.4700
        IRF7902TRPBFInternational Rectifier 8000
          IRF7902TRPBF
          DISTI # XSLY00000000860
          INFINEON/IRSO-8
          RoHS: Compliant
          4000
          • 4000:$0.4100
          图片 型号 描述
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          OMO.#: OMO-IRF7904TRPBF

          MOSFET MOSFT DUAL NCh 30V 7.6A
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          OMO.#: OMO-IRF7905TRPBF

          MOSFET MOSFT DUAL NCh 30V 8.9A
          IRF7902PBF

          Mfr.#: IRF7902PBF

          OMO.#: OMO-IRF7902PBF

          MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
          IRF7905PBF

          Mfr.#: IRF7905PBF

          OMO.#: OMO-IRF7905PBF

          MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
          IRF7902TRPBF  28K

          Mfr.#: IRF7902TRPBF 28K

          OMO.#: OMO-IRF7902TRPBF-28K-1190

          全新原装
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          Mfr.#: IRF7904

          OMO.#: OMO-IRF7904-1190

          全新原装
          IRF7904PBF

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          OMO.#: OMO-IRF7904PBF-INFINEON-TECHNOLOGIES

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          Mfr.#: IRF7907PBF

          OMO.#: OMO-IRF7907PBF-INFINEON-TECHNOLOGIES

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          Mfr.#: IRF7907PBF-1

          OMO.#: OMO-IRF7907PBF-1-1190

          全新原装
          IRF7905PBF

          Mfr.#: IRF7905PBF

          OMO.#: OMO-IRF7905PBF-INFINEON-TECHNOLOGIES

          IGBT Transistors MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
          可用性
          库存:
          Available
          订购:
          4000
          输入数量:
          IRF7902TRPBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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