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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| IPB020N10N5LF DISTI # 33954807 | Infineon Technologies AG | IPB020N10N5LF | 164000 |
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| IPB020N10N5LFATMA1 DISTI # 31951654 | Infineon Technologies AG | DIFFERENTIATED MOSFETS | 1000 |
|
| IPB020N10N5LF DISTI # 31599200 | Infineon Technologies AG | IPB020N10N5LF | 994 |
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| IPB020N10N5LFATMA1 DISTI # IPB020N10N5LFATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 376In Stock |
|
| IPB020N10N5LFATMA1 DISTI # IPB020N10N5LFATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 376In Stock |
|
| IPB020N10N5LFATMA1 DISTI # IPB020N10N5LFATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V D2PAK-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPB020N10N5LFATMA1 DISTI # V36:1790_17076744 | Infineon Technologies AG | DIFFERENTIATED MOSFETS | 0 |
|
| IPB020N10N5LF DISTI # IPB020N10N5LF | Infineon Technologies AG | SP001503854 , DIFFERENTIATED MOSFETS (Alt: IPB020N10N5LF) RoHS: Compliant Min Qty: 1000 | Asia - 0 |
|
| IPB020N10N5LFATMA1 DISTI # IPB020N10N5LFATMA1 | Infineon Technologies AG | DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB020N10N5LFATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB020N10N5LFATMA1 DISTI # SP001503854 | Infineon Technologies AG | DIFFERENTIATED MOSFETS (Alt: SP001503854) RoHS: Compliant Min Qty: 1000 | Europe - 0 |
|
| IPB020N10N5LFATMA1 DISTI # 93AC7098 | Infineon Technologies AG | MOSFET, N-CH, 100V, 120A, 313W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.3V,Power RoHS Compliant: Yes | 75 |
|
| IPB020N10N5LFATMA1 DISTI # 726-IPB020N10N5LFATM | Infineon Technologies AG | MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant | 1274 |
|
| IPB020N10N5LFATMA1 DISTI # 2986456 | Infineon Technologies AG | MOSFET, N-CH, 100V, 120A, 313W, TO-263 RoHS: Compliant | 55 |
|
| IPB020N10N5LFATMA1 DISTI # 2986456 | Infineon Technologies AG | MOSFET, N-CH, 100V, 120A, 313W, TO-263 | 55 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: IPB020N10N5 OMO.#: OMO-IPB020N10N5 |
MOSFET N-Ch 100V 120A D2PAK-2 |
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Mfr.#: IPB020N10N5ATMA1 OMO.#: OMO-IPB020N10N5ATMA1 |
MOSFET N-Ch 100V 120A D2PAK-2 |
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Mfr.#: IPB020NE7N3 G OMO.#: OMO-IPB020NE7N3-G |
MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 |
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Mfr.#: IPB020N10N5LFATMA1 |
MOSFET N-CH 100V D2PAK-3 |
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Mfr.#: IPB020N10N5 OMO.#: OMO-IPB020N10N5-1190 |
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) TO-263 |
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Mfr.#: IPB020N10N5LF OMO.#: OMO-IPB020N10N5LF-1190 |
SP001503854 , DIFFERENTIATED MOSFETS (Alt: IPB020N10N5LF) |
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Mfr.#: IPB020NE7N3G(020NE7N) |
全新原装 |
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Mfr.#: IPB020NE7N3GATMA1 |
MOSFET N-CH 75V 120A TO263-3 |
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Mfr.#: IPB020N04N G OMO.#: OMO-IPB020N04N-G-124 |
Darlington Transistors MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 |
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Mfr.#: IPB020N08N5ATMA1 |
RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2 |