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| PartNumber | APT50GN60BG | APT50GN60BDQ2G |
| Description | IGBT Transistors FG, IGBT, 600V, TO-247, RoHS | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS |
| Manufacturer | Microchip | Microchip |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.5 V | 1.5 V |
| Maximum Gate Emitter Voltage | 30 V | 30 V |
| Continuous Collector Current at 25 C | 107 A | 107 A |
| Pd Power Dissipation | 366 W | 366 W |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 107 A | 107 A |
| Height | 5.31 mm | 5.31 mm |
| Length | 21.46 mm | 21.46 mm |
| Operating Temperature Range | - 55 C to + 175 C | - 55 C to + 175 C |
| Width | 16.26 mm | 16.26 mm |
| Brand | Microchip / Microsemi | Microchip / Microsemi |
| Continuous Collector Current | 107 A | 107 A |
| Gate Emitter Leakage Current | 600 nA | 600 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1 | 1 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | 1.340411 oz | 1.340411 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT50GN60BG | IGBT Transistors FG, IGBT, 600V, TO-247, RoHS | |
| APT50GN60BDQ2G | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS | ||
| APT50GN60BDQ2G | IGBT Transistors | ||
| APT50GN60BG | IGBT Transistors | ||
| APT50GN60BD | 全新原装 | ||
| APT50GN60BDQ2 | 全新原装 | ||
| APT50GN60BDQ2G IKW50N6 | 全新原装 |