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| PartNumber | BSP603S2L | BSP603S2LHUMA1 |
| Description | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS | MOSFET N-CHANNEL_55/60V |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | SOT-223-4 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V |
| Id Continuous Drain Current | 5.2 A | - |
| Rds On Drain Source Resistance | 33 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 1.8 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 1.6 mm | 1.6 mm |
| Length | 6.5 mm | 6.5 mm |
| Product | MOSFET Small Signal | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 3.5 mm | 3.5 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 16 ns | - |
| Moisture Sensitive | Yes | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 16 ns | - |
| Factory Pack Quantity | 4000 | - |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28 ns | - |
| Typical Turn On Delay Time | 10.8 ns | - |
| Part # Aliases | BSP603S2LHUMA1 BSP63S2LXT SP000431792 | BSP603S2L BSP63S2LXT SP000431792 |
| Unit Weight | 0.003951 oz | 0.008826 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP603S2L | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS | |
| BSP603S2LHUMA1 | MOSFET N-CH 55V 5.2A SOT-223 | ||
| BSP603S2L | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS | ||
Infineon Technologies |
BSP603S2LHUMA1 | MOSFET N-CHANNEL_55/60V | |
| BSP603S22 | 全新原装 | ||
| BSP603S2L .. | 全新原装 | ||
| BSP603S2L H6327 | 全新原装 | ||
| BSP603S2LGRN | 全新原装 | ||
| BSP603S2LNT | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |