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BUZ32 SMD |
全新原装 |
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| BUZ325 |
全新原装 |
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| BUZ325 , MMBZ20VA |
全新原装 |
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| BUZ326 |
全新原装 |
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| BUZ328 |
全新原装 |
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| BUZ32A |
全新原装 |
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| BUZ32E3045 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| BUZ32E3045A |
全新原装 |
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| BUZ32H |
全新原装 |
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| BUZ32H3045A(BUZ32H) |
全新原装 |
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| BUZ32L3045A |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| BUZ339 |
全新原装 |
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| BUZ341 |
33 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA |
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| BUZ341 N128 |
全新原装 |
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| BUZ342 |
Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA |
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| BUZ344 |
Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA |
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| BUZ345 |
全新原装 |
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| BUZ346 |
全新原装 |
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| BUZ35 |
全新原装 |
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| BUZ350 |
Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA |
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| BUZ351 |
全新原装 |
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| BUZ353 |
全新原装 |
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| BUZ354 |
全新原装 |
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| BUZ358 |
全新原装 |
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| BUZ361 |
全新原装 |
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| BUZ36S |
全新原装 |
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| BUZ37 |
全新原装 |
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| BUZ377 |
全新原装 |
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| BUZ382 |
全新原装 |
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| BUZ32H3045ABUZ32H |
全新原装 |
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BUZ323 |
Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA |
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| BUZ32H3045A |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA |
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| BUZ32HXKSA1 |
- Bulk (Alt: BUZ32HXKSA1) |
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| BUZ331 |
Trans MOSFET N-CH 500V 8A 3-Pin(3+tab) TO-218AA - Bulk (Alt: BUZ331) |
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| BUZ355 |
- Bulk (Alt: BUZ355) |
|
Infineon Technologies |
BUZ32H3045AATMA1 |
MOSFET N-CH 200V 9.5A TO-263 |
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BUZ33 |
全新原装 |
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| BUZ330 |
全新原装 |
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| BUZ332A |
8 A, 600 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 |
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| BUZ334 |
全新原装 |
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| BUZ338 |
全新原装 |
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| BUZ34 |
全新原装 |
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| BUZ347 |
全新原装 |
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| BUZ349 |
32 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 |
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| BUZ357 |
Power Field-Effect Transistor, 5.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA |
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| BUZ36 |
Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE |
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| BUZ38 |
全新原装 |
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| BUZ380 |
全新原装 |
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| BUZ384 |
MOSFET Transistor, N-Channel, TO-218AA |
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| BUZ385 |
全新原装 |
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