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| PartNumber | FQD12N20LTM-F085 | FQD12N20LTM-F085P |
| Description | MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab | MOSFET 200V /9A/0.28 OHM @ VGS=10V |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | DPAK-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V |
| Id Continuous Drain Current | 9 A | 9 A |
| Rds On Drain Source Resistance | 280 mOhms | 220 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 55 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 2.39 mm | - |
| Length | 6.73 mm | - |
| Series | QFET | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | Enhancement Mode Field Effect Transistor | - |
| Width | 6.22 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor |
| Forward Transconductance Min | 11.6 S | 11.6 S |
| Fall Time | 120 ns | 120 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 190 ns | 190 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 60 ns |
| Typical Turn On Delay Time | 15 ns | 15 ns |
| Part # Aliases | FQD12N20LTM_F085 | FQD12N20LTM_F085P |
| Unit Weight | 0.009184 oz | 0.007055 oz |
| Vgs th Gate Source Threshold Voltage | - | 1 V |
| Qg Gate Charge | - | 21 nC |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD12N20LTM-F085 | MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab | |
| FQD12N20LTM-F085P | MOSFET 200V /9A/0.28 OHM @ VGS=10V | ||
ON Semiconductor |
FQD12N20LTM-F085 | MOSFET N-CH 200V 9A DPAK | |
| FQD12N20LTM-F085P | 200V /9A/0.28 OHM @ VGS=10V |