 | |  | |
| PartNumber | IPD25CN10NGATMA1 | IPD25CN10NGBUMA1 | IPD25CNE8N G |
| Description | MOSFET MV POWER MOS | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS 2 | MOSFET N-CH 85V 35A TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 35 A | 35 A | - |
| Rds On Drain Source Resistance | 19 mOhms | 19 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 23 nC | 31 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 71 W | 71 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | OptiMOS 2 | XPD25CN10 | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 38 S | 19 S | - |
| Fall Time | 3 ns | 3 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 4 ns | 4 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 13 ns | 13 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Part # Aliases | G IPD25CN10N SP001127810 | G IPD25CN10N IPD25CN10NGXT SP000096456 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Type | - | 1 N-Channel | - |
| Moisture Sensitive | - | Yes | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD25N06S4L30ATMA2 | MOSFET MOSFET | |
| IPD26N06S2L35ATMA2 | MOSFET N-CHANNEL_55/60V | ||
| IPD25N06S240ATMA2 | MOSFET N-CHANNEL_55/60V | ||
| IPD25CN10NGATMA1 | MOSFET MV POWER MOS | ||
| IPD25DP06LMATMA1 | MOSFET TRENCH 40<-<100V | ||
| IPD25DP06NMATMA1 | MOSFET TRENCH 40<-<100V | ||
| IPD25CNE8N G | MOSFET N-CH 85V 35A TO252-3 | ||
| IPD26N06S2L35ATMA1 | Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R | ||
| IPD25CN10NGATMA1 | MOSFET N-CH 100V 35A TO252-3 | ||
| IPD25CN10NGBUMA1 | MOSFET N-CH 100V 35A TO252-3 | ||
| IPD25N06S240ATMA1 | MOSFET N-CH 55V 29A TO252-3 | ||
| IPD25N06S240ATMA2 | MOSFET N-CH 55V 29A TO252-3 | ||
| IPD25N06S4L30ATMA1 | MOSFET N-CH 60V 25A TO252-3 | ||
| IPD25N06S4L30ATMA2 | MOSFET N-CH 60V 25A TO252-3 | ||
| IPD26N06S2L35ATMA2 | MOSFET N-CH 55V 30A TO252-3 | ||
Infineon Technologies |
IPD25CN10NGBUMA1 | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS 2 | |
| IPD26N06S2L35ATMA1 | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS | ||
| IPD25N06S240ATMA1 | MOSFET N-CHANNEL_55/60V | ||
| IPD25CN10NGATMA1-CUT TAPE | 全新原装 | ||
| IPD25DP06LMATMA1 | MOSFET P-CH 60V TO252-3 | ||
| IPD25DP06LMSAUMA1 | MOSFET P-CH 60V TO252-3 | ||
| IPD25DP06NMATMA1 | MOSFET P-CH 60V TO252-3 | ||
| IPD26DP06NMSAUMA1 | MOSFET P-CH 60V TO252-3 | ||
| IPD25CN10NG , 2SD2118TLQ | 全新原装 | ||
| IPD25CN10NGBUMA1 , 2SD21 | 全新原装 | ||
| IPD25CNE8NG | 全新原装 | ||
| IPD25N06 | 全新原装 | ||
| IPD25N06L | 全新原装 | ||
| IPD25N06S-04 | 全新原装 | ||
| IPD25N06S2-40 | MOSFET N-Ch 55V 29A DPAK-2 OptiMOS | ||
| IPD25N06S4L | 全新原装 | ||
| IPD25N06S4L-30 | Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK | ||
| IPD25N06S4L-30. | 全新原装 | ||
| IPD25NE8NG | 全新原装 | ||
| IPD26N06S2L-35 | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS | ||
| IPD26N06S2L35 | SmallSignalBipolarTransistor,0.3AI(C),140VV(BR)CEO,1-Element,NPN,Silicon | ||
| IPD2N06L35 | 全新原装 |