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SEMIX6

SEMIX603GAR066HDS vs SEMIX603GB066HDS vs SEMIX603GB12E4P

 
PartNumberSEMIX603GAR066HDSSEMIX603GB066HDSSEMIX603GB12E4P
DescriptionSEMIX, Trench IGBT Module, 600V, 800ASEMIX, Compact design- Trench IGBT Module, insulation by DCB, 1200V, 800A
制造商 型号 描述 RFQ
SEMIX603GAR066HDS SEMIX, Trench IGBT Module, 600V, 800A
SEMIX603GB066HDS 全新原装
SEMIX603GB12E4P SEMIX, Compact design- Trench IGBT Module, insulation by DCB, 1200V, 800A
SEMIX604GAL12E4S SEMIX, Trench IGBT Module, 1200V, 800A
SEMIX604GB126HDS SEMIX, Trench IGBT Module, 1200V, 400A
SEMIX604GB12E4S 全新原装
SEMIX604GB12T4S POWER IGBT TRANSISTOR
SEMIX604GB12T4V6 全新原装
SEMIX604GB12VS IGBT MODULE, DUAL, 1.2KV, 880A, Transistor Polarity:Dual NPN, DC Collector Current:880A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br
SEMIX653GAL176HDS IGBT MODULE, SINGLE, 1.7KV, 619A, Transistor Polarity:NPN, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1
SEMIX653GB176HDS IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V,
SEMIX653GD176HDC IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC
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