 | | | |
| PartNumber | STD12N60M2 | STD12N65M2 | STD12N60DM2AG |
| Description | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in DPAK package | MOSFET N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a DPAK package | MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | 650 V |
| Id Continuous Drain Current | 9 A | 8 A | 10 A |
| Rds On Drain Source Resistance | 395 mOhms | 420 mOhms | 440 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V | 3 V |
| Qg Gate Charge | 16 nC | 16.5 nC | 14.5 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | 85 W | 85 W | 110 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | MDmesh | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.4 mm | - | - |
| Length | 6.2 mm | - | - |
| Product | Power MOSFET | - | - |
| Series | STD12N60M2 | STD12N65M2 | STD12N60DM2AG |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MDmesh M2 | - | - |
| Width | 6.6 mm | - | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Forward Transconductance Min | - | - | - |
| Fall Time | - | 13.5 ns | 9.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | - | 7 ns | 8 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | - | 34 ns | 30 ns |
| Typical Turn On Delay Time | - | 9 ns | 15 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Vgs Gate Source Voltage | - | 25 V | 25 V |
| Qualification | - | - | AEC-Q101 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STD12N60M2 | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in DPAK package | |
| STD12N65M2 | MOSFET N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a DPAK package | ||
| STD12N60DM2AG | MOSFET | ||
| STD12N65M5 | MOSFET POWER MOSFET N-CH 650V | ||
| STD12N65M2 | RF Bipolar Transistors MOSFET N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a DPAK package | ||
| STD12N60M2 | MOSFET N-CHANNEL 600V 9A DPAK | ||
| STD12N65M5 | MOSFET N-CH 650V 8.5A DPAK | ||
| STD12N60M2-CUT TAPE | 全新原装 | ||
| STD12N65M5 12N65M5 | 全新原装 |