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| PartNumber | STGD4M65DF2 | STGD3NB60SDT4 | STGD3NC120H-1 |
| Description | IGBT Transistors PTD HIGH VOLTAGE | IGBT Transistors N-Ch 600 Volt 3 Amp | IGBT Transistors 7 A, 1200 V very fast IGBT |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | DPAK-3 | TO-252-3 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.6 V | 1.5 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 8 A | 6 A | - |
| Pd Power Dissipation | 68 W | 48 W | - |
| Minimum Operating Temperature | - 55 C | - 65 C | - |
| Maximum Operating Temperature | + 175 C | + 150 C | - |
| Series | STGD4M65DF2 | STGD3NB60SD | STGD3NC120H |
| Packaging | Reel | Reel | - |
| Continuous Collector Current Ic Max | 8 A | 6 A | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | +/- 250 uA | +/- 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 2500 | 2500 | 3000 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Qualification | - | AEC-Q101 | - |
| Height | - | 2.4 mm | - |
| Length | - | 6.6 mm | - |
| Width | - | 6.2 mm | - |
| Continuous Collector Current | - | 3 A | - |
| Unit Weight | - | 0.139332 oz | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STGD5H60DF | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed | |
| STGD4M65DF2 | IGBT Transistors PTD HIGH VOLTAGE | ||
| STGD6M65DF2 | IGBT Transistors PTD HIGH VOLTAGE | ||
| STGD6NC60H-1 | IGBT Transistors N-channel 600 V, 7 A very fast IGBT | ||
| STGD7NC60HT4 | IGBT Transistors N-Ch 600 Volt 14 Amp | ||
| STGD5NB120SZT4 | IGBT Transistors N-Ch 1200 Volt 5 Amp | ||
| STGD7NB60ST4 | IGBT Transistors N-Ch 600 Volt 7 Amp | ||
| STGD5NB120SZ-1 | IGBT Transistors 5 A 1200V LOW DROP INTERN CLAMPED IGBT | ||
| STGD8NC60KDT4 | IGBT Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET | ||
| STGD6NC60HDT4 | IGBT Transistors PowerMESH" IGBT | ||
| STGD3NB60SDT4 | IGBT Transistors N-Ch 600 Volt 3 Amp | ||
| STGD3NC120H-1 | IGBT Transistors 7 A, 1200 V very fast IGBT | ||
| STGD7NB60KT4 | IGBT Transistors N-Ch 600 Volt 7 Amp | ||
| STGD6NC60HT4 | IGBT Transistors PowerMESH" IGBT | ||
| STGD7NB120ST4 | IGBT Transistors N-Channel 7A-1200V IPAK PowerMESH IGBT | ||
| STGD5NB120SZ-1 | IGBT Transistors 5 A 1200V LOW DROP INTERN CLAMPED IGBT | ||
| STGD7NB60ST4 | IGBT 600V 15A 55W DPAK | ||
| STGD6NC60HDT4 | IGBT 600V 15A 56W DPAK | ||
| STGD7NC60HT4 | IGBT 600V 25A 70W DPAK | ||
| STGD3NB60SDT4 | IGBT Transistors N-Ch 600 Volt 3 Amp | ||
| STGD6NC60H-1 | IGBT Transistors IGBT & Power Bipola | ||
| STGD5NB120SZT4 | IGBT Transistors N-Ch 1200 Volt 5 Amp | ||
| STGD6M65DF2 | TRENCH GATE FIELD-STOP IGBT, M S | ||
| STGD3NC120H-1 | IGBT 1200V 16A IPAK | ||
| STGD4M65DF2 | TRENCH GATE FIELD-STOP IGBT, M S | ||
| STGD5H60DF | TRENCH GATE FIELD-STOP IGBT, H S | ||
| STGD6NC60HT4 | IGBT 600V 15A 56W DPAK | ||
| STGD7NB120S-1 | IGBT 1200V 10A 55W IPAK | ||
| STGD7NB60KT4 | IGBT 600V 14A 70W DPAK | ||
| STGD3NB60SDT4-CUT TAPE | 全新原装 | ||
| STGD5H60DF-CUT TAPE | 全新原装 | ||
| STGD5NB120SZT4-CUT TAPE | 全新原装 | ||
| STGD6NC60HDT4-CUT TAPE | 全新原装 | ||
| STGD7NC60HT4-CUT TAPE | 全新原装 | ||
| STGD3NB60SD | 全新原装 | ||
| STGD5H60DFSF | 全新原装 | ||
| STGD5NB120S | 全新原装 | ||
| STGD5NB120SZ | 全新原装 | ||
| STGD6N60 | 全新原装 | ||
| STGD6NC60 | 全新原装 | ||
| STGD6NC60H | 全新原装 | ||
| STGD6NC60HD | 全新原装 | ||
| STGD6NC60H_07 | 全新原装 | ||
| STGD6NC6HDT4 | 全新原装 | ||
| STGD7NB60HT4 | 全新原装 | ||
| STGD7NB60K | 全新原装 | ||
| STGD7NB60S | IGBT Transistors N-Ch 600 Volt 7 Amp | ||
| STGD7NC60H | 全新原装 | ||
| STGD7NC60HT4(7N60) | 全新原装 | ||
| STGD8NC60KD | 全新原装 |
