STGD

STGD4M65DF2 vs STGD3NB60SDT4 vs STGD3NC120H-1

 
PartNumberSTGD4M65DF2STGD3NB60SDT4STGD3NC120H-1
DescriptionIGBT Transistors PTD HIGH VOLTAGEIGBT Transistors N-Ch 600 Volt 3 AmpIGBT Transistors 7 A, 1200 V very fast IGBT
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseDPAK-3TO-252-3-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V600 V-
Collector Emitter Saturation Voltage1.6 V1.5 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C8 A6 A-
Pd Power Dissipation68 W48 W-
Minimum Operating Temperature- 55 C- 65 C-
Maximum Operating Temperature+ 175 C+ 150 C-
SeriesSTGD4M65DF2STGD3NB60SDSTGD3NC120H
PackagingReelReel-
Continuous Collector Current Ic Max8 A6 A-
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current+/- 250 uA+/- 100 nA-
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity250025003000
SubcategoryIGBTsIGBTsIGBTs
Qualification-AEC-Q101-
Height-2.4 mm-
Length-6.6 mm-
Width-6.2 mm-
Continuous Collector Current-3 A-
Unit Weight-0.139332 oz-
制造商 型号 描述 RFQ
STMicroelectronics
STMicroelectronics
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STGD5NB120SZT4 IGBT Transistors N-Ch 1200 Volt 5 Amp
STGD6M65DF2 TRENCH GATE FIELD-STOP IGBT, M S
STGD3NC120H-1 IGBT 1200V 16A IPAK
STGD4M65DF2 TRENCH GATE FIELD-STOP IGBT, M S
STGD5H60DF TRENCH GATE FIELD-STOP IGBT, H S
STGD6NC60HT4 IGBT 600V 15A 56W DPAK
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STGD3NB60SDT4-CUT TAPE 全新原装
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STGD7NC60HT4-CUT TAPE 全新原装
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STGD6NC60HD 全新原装
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