 |  | | |
| PartNumber | STS8DN6LF6AG | STS8DN3LLH5 | STS8C5H30L |
| Description | MOSFET Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package | MOSFET Dual N-Ch 30V 10A STripFET V Pwr | MOSFET N/P-Ch 30V 8/5 Amp |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SOIC-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 30 V | 30 V |
| Id Continuous Drain Current | 8 A | 10 A | 5.4 A, 8 A |
| Rds On Drain Source Resistance | 21 mOhms, 21 mOhms | 15.5 mOhms | 22 mOhms, 55 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 22 V | 10 V |
| Qg Gate Charge | 27 nC, 27 nC | 5.4 nC | 7 nC, 12.5 nC |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | + 150 C |
| Pd Power Dissipation | 3.2 W | 2.7 W | 1.6 W, 2 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Tradename | STripFET | STripFET | - |
| Series | STS8DN6LF6AG | STS8DN3LLH5 | STS8C5H30L |
| Transistor Type | 2 N-Channel | 2 N-Channel | 1 N-Channel Power MOSFET, 1 P-Channel Power MOSFET |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 7 ns, 7 ns | 3.5 ns | 8 ns, 35 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns, 20 ns | 4.2 ns | 14.5 ns, 35 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 56 ns, 56 ns | 21.1 ns | 23 ns, 125 ns |
| Typical Turn On Delay Time | 9.6 ns, 9.6 ns | 4 ns | 12 ns, 25 ns |
| Packaging | - | Reel | Reel |
| Unit Weight | - | 0.019048 oz | 0.002998 oz |
| Height | - | - | 1.65 mm |
| Length | - | - | 5 mm |
| Type | - | - | MOSFET |
| Width | - | - | 4 mm |
| Forward Transconductance Min | - | - | 8.5 S, 10 S |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STS8DN6LF6AG | MOSFET Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package | |
| STS8DN3LLH5 | MOSFET Dual N-Ch 30V 10A STripFET V Pwr | ||
| STS8C5H30L | MOSFET N/P-Ch 30V 8/5 Amp | ||
| STS8DNF3LL | MOSFET N-Ch 30 Volt 8 Amp | ||
| STS8DNH3LL | MOSFET Dual N-Ch 30 Volt 8A | ||
| STS8N6LF6AG | MOSFET Automotive-grade N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package | ||
| STS8C5H30L | MOSFET N/P-CH 30V 8A/5.4A 8SOIC | ||
| STS8DN3LLH5 | MOSFET 2N-CH 30V 10A 8SO | ||
| STS8DN6LF6AG | MOSFET 2 N-CHANNEL 60V 8A 8SO | ||
| STS8DNF3LL | MOSFET 2N-CH 30V 8A 8-SOIC | ||
| STS8DNH3LL | MOSFET 2N-CH 30V 8A 8-SOIC | ||
| STS8N6LF6AG | MOSFET N-CHANNEL 60V 8A 8SO | ||
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