TGF2023-2-01

Mfr. #:: TGF2023-2-01
制造商:: Qorvo
描述:: RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
生命周期:: 制造商新产品。
数据表:: TGF2023-2-01 数据表
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更多信息:: TGF2023-2-01 更多信息

产品属性
属性值

制造商：: 科沃

产品分类：: 射频 JFET 晶体管

RoHS：: Y

晶体管类型：: HEMT

技术：: 氮化镓碳化硅

晶体管极性：: N通道

包装/案例：: 死

打包：: 凝胶包

产品：: 射频结型场效应管

系列：: 转化生长因子

类型：: 氮化镓碳化硅 HEMT

品牌：: 科沃

产品类别：: 射频 JFET 晶体管

出厂包装数量：: 50

子类别：: 晶体管

第 # 部分别名：: 1099624

Tags: TGF2023-2-0, TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2023-2-01 描述

***hardson RFPD: RF POWER TRANSISTOR

TGF2023-2-01 更多信息

GaN Solutions: Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

TGF2023 GaN HEMT Transistors: Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More

Market price

型号	制造商	描述	库存	价格
TGF2023-2-01 DISTI # 772-TGF2023-2-01	Qorvo	RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB RoHS: Compliant	0	50:$30.2800 100:$26.1900 250:$24.6200

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