TGF2025

Mfr. #:: TGF2025
制造商:: Qorvo
描述:: RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm
生命周期:: 制造商新产品。
数据表:: TGF2025 数据表
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ECAD Model:
更多信息:: TGF2025 更多信息

产品属性
属性值

制造商: TriQuint (Qorvo)

产品分类: 晶体管 - FET、MOSFET - 单

系列: 转化生长因子

打包: 凝胶包

部分别名: 1098611

安装方式: 贴片/贴片

工作温度范围: - 65 C to + 150 C

技术: 砷化镓

配置: 单身的

晶体管型: pHEMT

获得: 14 dB

钯功耗: 0.89 W

最高工作温度: + 150 C

最低工作温度: - 65 C

工作频率: 20 GHz

Id 连续漏极电流: 81 mA

Vds-漏-源-击穿电压: 8 V

正向跨导最小值: 97 mS

VGS-栅极-源极击穿电压: - 15 V

最大漏栅电压: 12 V

NF-噪声系数: 0.9 dB

P1dB-压缩点: 24 dBm

Tags: TGF202, TGF20, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2025 更多信息

TGF2018/25 Heterojunction Power FETs: Qorvo TGF2018/25 High-Efficiency Heterojunction Power FETs operate from DC to 20 GHz and are designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. The TGF2025 typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes these appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More

Triquint GaAs pHEMt Low Noise Amplifiers: TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More

Market price

型号	制造商	描述	库存	价格
TGF2025 DISTI # 772-TGF2025	Qorvo	RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm RoHS: Compliant	300	100:$6.1000 300:$5.7000 500:$5.3300 1000:$4.9800

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