SIHB12N60ET1-GE3

SIHB12N60ET1-GE3
Mfr. #:
SIHB12N60ET1-GE3
制造商:
Vishay
描述:
MOSFET N-CH 600V 12A TO263
生命周期:
制造商新产品。
数据表:
SIHB12N60ET1-GE3 数据表
交货:
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ECAD Model:
更多信息:
SIHB12N60ET1-GE3 更多信息
产品属性
属性值
Tags
SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型号 制造商 描述 库存 价格
SIHB12N60ET1-GE3
DISTI # SIHB12N60ET1-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 12A TO263
RoHS: Not compliant
Min Qty: 1
Container: Bulk
800In Stock
  • 5000:$0.9145
  • 2500:$0.9497
  • 1000:$1.0201
  • 500:$1.2311
  • 100:$1.4985
  • 10:$1.8640
  • 1:$2.0800
SIHB12N60ET1-GE3
DISTI # SIHB12N60ET1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin D2PAK T/R - Bulk (Alt: SIHB12N60ET1-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Bulk
Americas - 0
    SIHB12N60ET1-GE3
    DISTI # 78-SIHB12N60ET1-GE3
    Vishay IntertechnologiesMOSFET N-Channel 600V
    RoHS: Compliant
    0
    • 800:$1.1700
    • 1600:$0.9710
    • 3200:$0.9040
    • 5600:$0.8710
    图片 型号 描述
    SIHB12N65E-GE3

    Mfr.#: SIHB12N65E-GE3

    OMO.#: OMO-SIHB12N65E-GE3

    MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N60E-GE3

    Mfr.#: SIHB12N60E-GE3

    OMO.#: OMO-SIHB12N60E-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N60ET1-GE3

    Mfr.#: SIHB12N60ET1-GE3

    OMO.#: OMO-SIHB12N60ET1-GE3

    MOSFET N-Channel 600V
    SIHB12N60ET5-GE3

    Mfr.#: SIHB12N60ET5-GE3

    OMO.#: OMO-SIHB12N60ET5-GE3

    MOSFET N-Channel 600V
    SIHB12N60E-GE3

    Mfr.#: SIHB12N60E-GE3

    OMO.#: OMO-SIHB12N60E-GE3-VISHAY

    Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
    SIHB12N65E-GE3

    Mfr.#: SIHB12N65E-GE3

    OMO.#: OMO-SIHB12N65E-GE3-VISHAY

    IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
    SIHB12N60EGE3

    Mfr.#: SIHB12N60EGE3

    OMO.#: OMO-SIHB12N60EGE3-1190

    Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB12N65E

    Mfr.#: SIHB12N65E

    OMO.#: OMO-SIHB12N65E-1190

    全新原装
    SIHB12N60ET1-GE3

    Mfr.#: SIHB12N60ET1-GE3

    OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY

    MOSFET N-CH 600V 12A TO263
    SIHB12N60ET5-GE3

    Mfr.#: SIHB12N60ET5-GE3

    OMO.#: OMO-SIHB12N60ET5-GE3-VISHAY

    MOSFET N-CH 600V 12A TO263
    可用性
    库存:
    Available
    订购:
    1500
    输入数量:
    SIHB12N60ET1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$0.00
    US$0.00
    10
    US$0.00
    US$0.00
    100
    US$0.00
    US$0.00
    500
    US$0.00
    US$0.00
    1000
    US$0.00
    US$0.00
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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