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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| IPD65R380E6 DISTI # 30600849 | Infineon Technologies AG | Trans MOSFET N-CH 700V 10.6A 3-Pin(2+Tab) TO-252 RoHS: Compliant | 250 |
|
| IPD65R380E6BTMA1 DISTI # IPD65R380E6BTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 650V 10.6A TO252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD65R380E6BTMA1 DISTI # IPD65R380E6BTMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 650V 10.6A TO252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPD65R380E6BTMA1 DISTI # IPD65R380E6BTMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 650V 10.6A TO252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPD65R380E6ATMA1 DISTI # IPD65R380E6ATMA1-ND | Infineon Technologies AG | MOSFET N-CH 650V 10.6A TO252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPD65R380E6 DISTI # C1S322000283356 | Infineon Technologies AG | Trans MOSFET N-CH 700V 10.6A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 250 |
|
| IPD65R380E6ATMA1 DISTI # IPD65R380E6ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R380E6ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD65R380E6ATMA1 DISTI # 13AC9049 | Infineon Technologies AG | MOSFET, N-CH, 650V, 10.6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.34ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power , RoHS Compliant: Yes | 588 |
|
| IPD65R380E6 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 10600 |
|
| IPD65R380E6ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 73450 |
|
| IPD65R380E6ATMA1 DISTI # 726-IPD65R380E6ATMA1 | Infineon Technologies AG | MOSFET LOW POWER_LEGACY RoHS: Compliant | 0 |
|
| IPD65R380E6 DISTI # 726-IPD65R380E6 | Infineon Technologies AG | MOSFET N-Ch 700V 10.6A DPAK-2 CoolMOS E6 RoHS: Compliant | 941 |
|
| IPD65R380E6BTMA1 DISTI # N/A | Infineon Technologies AG | MOSFET LOW POWER_LEGACY | 0 | |
| IPD65R380E6ATMA1 DISTI # 2726056 | Infineon Technologies AG | MOSFET, N-CH, 650V, 10.6A, TO-252-3 RoHS: Compliant | 588 |
|
| IPD65R380E6ATMA1 DISTI # 2726056 | Infineon Technologies AG | MOSFET, N-CH, 650V, 10.6A, TO-252-3 RoHS: Compliant | 797 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: IPD65R420CFDATMA1 OMO.#: OMO-IPD65R420CFDATMA1 |
MOSFET LOW POWER_LEGACY |
|
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Mfr.#: IPD65R660CFDA OMO.#: OMO-IPD65R660CFDA |
MOSFET N-Ch 650V 6A DPAK-2 |
|
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Mfr.#: IPD65R950C6 OMO.#: OMO-IPD65R950C6 |
MOSFET N-Ch 700V 4.5A DPAK-2 |
|
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Mfr.#: IPD65R190C7ATMA1 OMO.#: OMO-IPD65R190C7ATMA1 |
MOSFET HIGH POWER_NEW |
|
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Mfr.#: IPD65R420CFD OMO.#: OMO-IPD65R420CFD |
MOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2 |
|
Mfr.#: IPD650P06NMATMA1 OMO.#: OMO-IPD650P06NMATMA1 |
MOSFET TRENCH 40<-<100V |
|
|
Mfr.#: IPD65R600C6BTMA1 OMO.#: OMO-IPD65R600C6BTMA1 |
MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 |
|
Mfr.#: IPD65R250E6 65E6250 OMO.#: OMO-IPD65R250E6-65E6250-1190 |
全新原装 |
|
|
Mfr.#: IPD65R380E6 OMO.#: OMO-IPD65R380E6-1190 |
Trans MOSFET N-CH 700V 10.6A 3-Pin(2+Tab) TO-252 |
|
|
Mfr.#: IPD65R950CFD OMO.#: OMO-IPD65R950CFD-1190 |
MOSFET N-Ch 700V 3.9A DPAK-2 |
