STGW80H65FB

Mfr. #:: STGW80H65FB
制造商:: STMicroelectronics
描述:: IGBT Transistors IGBT & Power Bipola
生命周期:: 制造商新产品。
数据表:: STGW80H65FB 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: STGW80H65FB 更多信息 STGW80H65FB Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 600-650V IGBTs

打包: 管子

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247-3

配置: 单身的

最大功率: 469W

反向恢复时间trr: -

电流收集器 Ic-Max: 120A

电压收集器发射极击穿最大值: 650V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 240A

Vce-on-Max-Vge-Ic: 2V @ 15V, 80A

开关能源: 2.1mJ (on), 1.5mJ (off)

栅极电荷: 414nC

Td-on-off-25°C: 84ns/280ns

测试条件: 400V, 80A, 10 Ohm, 15V

钯功耗: 469 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.6 V

25-C 时的连续集电极电流: 120 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: 20 V

连续集电极电流 Ic-Max: 80 A

Tags: STGW80H, STGW80, STGW8, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW80H65FB 描述

***ical: Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube

***i-Key: IGBT 650V 120A 469W TO-247

***ark: Ptd High Voltage

STGW80H65FB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型号	制造商	描述	库存	价格
STGW80H65FB DISTI # 497-15134-5-ND	STMicroelectronics	IGBT 650V 120A 469W TO-247 RoHS: Compliant Min Qty: 600 Container: Tube	Temporarily Out of Stock	600:$4.8825
STGW80H65FB-4 DISTI # STGW80H65FB-4-ND	STMicroelectronics	IGBT BIPO 650V 80A TO247 RoHS: Compliant Min Qty: 600 Container: Tube	Temporarily Out of Stock	600:$8.3737
STGW80H65FB DISTI # STGW80H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65FB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$3.7900 3600:$3.8900 2400:$3.9900 1200:$4.1900 600:$4.3900
STGW80H65FB DISTI # STGW80H65FB-4	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65FB-4) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0
STGW80H65FB DISTI # 26Y5821	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$3.9000 250:$4.0200 100:$4.8000 50:$5.1600 25:$5.5200 10:$6.0600 1:$6.7500
STGW80H65FB-4 DISTI # 26Y5822	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$7.1500 250:$7.3700 100:$8.4200 50:$8.9100 25:$9.9000 10:$10.1800 1:$10.8900
STGW80H65FB DISTI # 511-STGW80H65FB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed RoHS: Compliant	34	1:$7.1300 10:$6.4500 25:$6.1500 100:$5.3400 250:$5.1000 500:$4.6500 1000:$4.0500
STGW80H65FB-4 DISTI # 511-STGW80H65FB-4	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed	0	1:$11.5400 10:$10.6100 25:$10.1700 100:$8.9600 250:$8.5200 500:$7.9700 1000:$7.3100

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