STGW80H65DFB

Mfr. #:: STGW80H65DFB
制造商:: STMicroelectronics
描述:: IGBT 650V 120A 469W TO-247
生命周期:: 制造商新产品。
数据表:: STGW80H65DFB 数据表
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更多信息:: STGW80H65DFB 更多信息 STGW80H65DFB Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 600-650V IGBTs

打包: 管子

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247

配置: 单身的

最大功率: 469W

反向恢复时间trr: 85ns

电流收集器 Ic-Max: 120A

电压收集器发射极击穿最大值: 650V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 240A

Vce-on-Max-Vge-Ic: 2V @ 15V, 80A

开关能源: 2.1mJ (on), 1.5mJ (off)

栅极电荷: 414nC

Td-on-off-25°C: 84ns/280ns

测试条件: 400V, 80A, 10 Ohm, 15V

钯功耗: 469 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.6 V

25-C 时的连续集电极电流: 120 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: 20 V

连续集电极电流 Ic-Max: 80 A

Tags: STGW80H, STGW80, STGW8, STGW, STG

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW80H65DFB 描述

***Components: In a Tube of 30, STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247

***ure Electronics: HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-247

***ical: Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube

***p One Stop Global: Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube

***ied Electronics & Automation: IGBT N-Ch 650V 80A High-Speed TO247

***i-Key: IGBT 650V 120A 469W TO-247

***ark: IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)

***nell: IGBT SINGOLO 650V 120A TO-247; Corrente di Collettore CC:120A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:469W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)

STGW80H65DFB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型号	制造商	描述	库存	价格
STGW80H65DFB DISTI # V36:1790_06560788	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
STGW80H65DFB DISTI # 497-14368-ND	STMicroelectronics	IGBT 650V 120A 469W TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1020:$4.8225 510:$5.4525 120:$6.1770 30:$7.0277 1:$8.0700
STGW80H65DFB-4 DISTI # STGW80H65DFB-4-ND	STMicroelectronics	IGBT BIPO 650V 80A TO247 RoHS: Compliant Min Qty: 600 Container: Tube	Temporarily Out of Stock	600:$9.9325
STGW80H65DFB DISTI # STGW80H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube (Alt: STGW80H65DFB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€4.7900 10:€4.3900 25:€4.1900 50:€3.9900 100:€3.8900 500:€3.6900 1000:€3.4900
STGW80H65DFB DISTI # STGW80H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	600:$4.3900 1200:$4.1900 2400:$3.9900 3600:$3.8900 6000:$3.7900
STGW80H65DFB DISTI # STGW80H65DFB-4	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB-4) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	600:$8.5900 1200:$8.1900 2400:$7.8900 3600:$7.4900 6000:$7.3900
STGW80H65DFB DISTI # 45AC7608	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Bulk (Alt: 45AC7608) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$7.1400 10:$6.4600 25:$6.1600 50:$5.7500 100:$5.3400 250:$5.1100 500:$4.6500
STGW80H65DFB-4 DISTI # STGW80H65DFB-4	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 4-Pin TO-247 Tube (Alt: STGW80H65DFB-4) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€8.7900 10:€8.0900 25:€7.6900 50:€7.3900 100:€7.1900 500:€6.8900 1000:€6.3900
STGW80H65DFB DISTI # 45AC7608	STMicroelectronics	IGBT, SINGLE, 650V, 120A, TO-247,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes	0	500:$4.7000 250:$5.1500 100:$5.3900 50:$5.8000 25:$6.2100 10:$6.5100 1:$7.2000
STGW80H65DFB-4 DISTI # 26Y5820	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$7.2500
STGW80H65DFB DISTI # 511-STGW80H65DFB	STMicroelectronics	IGBT Transistors Trench gte FieldStop IGBT 650V 80A RoHS: Compliant	0	1:$7.1300 10:$6.4500 25:$6.1500 100:$5.3400 250:$5.1000 500:$4.6500 1000:$4.0500
STGW80H65DFB-4 DISTI # 511-STGW80H65DFB-4	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed	0	1:$12.1700 10:$11.1900 25:$10.7300 100:$9.4500 250:$8.9900 500:$8.4100 1000:$7.7100
STGW80H65DFB	ACTIVE COMPNTS/DIODES		25
STGW80H65DFB DISTI # 7925814P	STMicroelectronics	IGBT N-CH 650V 80A HIGH-SPEED TO247, TU	384	20:£4.5800 10:£4.6700
STGW80H65DFB DISTI # 2807180	STMicroelectronics	IGBT, SINGLE, 650V, 120A, TO-247 RoHS: Compliant	472	1020:$6.3200 510:$7.2600 120:$8.3300 30:$9.5900 1:$11.1400
STGW80H65DFB DISTI # 2807180	STMicroelectronics	IGBT, SINGLE, 650V, 120A, TO-247 RoHS: Compliant	472	100:£4.2300 50:£4.5600 10:£4.8800 5:£5.6600 1:£6.2000

图片	型号	描述
	Mfr.#: STGW80V60DF OMO.#: OMO-STGW80V60DF	IGBT Transistors Trench gate V series 600V 80A HiSpd
	Mfr.#: STGW80H65FB OMO.#: OMO-STGW80H65FB	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
	Mfr.#: STGW80H65DFB OMO.#: OMO-STGW80H65DFB	IGBT Transistors Trench gte FieldStop IGBT 650V 80A
	Mfr.#: STGW80H65FB-4 OMO.#: OMO-STGW80H65FB-4	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
	Mfr.#: STGW80H65DFB-4 OMO.#: OMO-STGW80H65DFB-4-STMICROELECTRONICS	IGBT Transistors IGBT & Power Bipola
	Mfr.#: STGW80H65FB-4 OMO.#: OMO-STGW80H65FB-4-STMICROELECTRONICS	IGBT Transistors IGBT & Power Bipola
	Mfr.#: STGW80H65FB OMO.#: OMO-STGW80H65FB-STMICROELECTRONICS	IGBT Transistors IGBT & Power Bipola
	Mfr.#: STGW80V60F OMO.#: OMO-STGW80V60F-STMICROELECTRONICS	IGBT Transistors IGBT & Power Bipola
	Mfr.#: STGW80V60DF OMO.#: OMO-STGW80V60DF-STMICROELECTRONICS	IGBT 600V 120A 469W TO247
	Mfr.#: STGW80H65DFB OMO.#: OMO-STGW80H65DFB-STMICROELECTRONICS	IGBT 650V 120A 469W TO-247

STGW80H65DFB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes