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| PartNumber | IPD65R420CFDATMA1 | IPD65R420CFDATMA2 | IPD65R420CFDBTMA1 |
| Description | MOSFET LOW POWER_LEGACY | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | MOSFET N-CH 650V 8.7A TO252 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | CoolMOS CFDA | CFD2 | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPD65R420CFD SP001117738 | IPD65R420CFD | - |
| Unit Weight | 0.139332 oz | - | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Id Continuous Drain Current | - | 8.7 A | - |
| Rds On Drain Source Resistance | - | 420 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 3.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 31.5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 83.3 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 8 ns | - |
| Rise Time | - | 7 ns | - |
| Typical Turn Off Delay Time | - | 38 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD65R420CFDATMA1 | MOSFET LOW POWER_LEGACY | |
| IPD65R660CFDA | MOSFET N-Ch 650V 6A DPAK-2 | ||
| IPD65R660CFDATMA1 | MOSFET LOW POWER_LEGACY | ||
| IPD65R950CFDBTMA1 | MOSFET N-Ch 700V 3.9A DPAK-2 | ||
| IPD65R950CFD | MOSFET N-Ch 700V 3.9A DPAK-2 | ||
| IPD65R660CFD | MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2 | ||
| IPD65R950C6ATMA1 | MOSFET N-Ch 700V 4.5A DPAK-2 | ||
| IPD65R950C6 | MOSFET N-Ch 700V 4.5A DPAK-2 | ||
| IPD65R600C6 | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 | ||
| IPD65R950CFDATMA1 | MOSFET LOW POWER_LEGACY | ||
| IPD65R600E6ATMA1 | MOSFET N-Ch 700V 7.3A DPAK-2 | ||
| IPD65R420CFDATMA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPD65R600C6BTMA1 | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 | ||
| IPD65R950CFDATMA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPD65R660CFDATMA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPD65R660CFDAATMA1 | MOSFET N-CH TO252-3 | ||
| IPD65R420CFDATMA1 | MOSFET N-CH 650V 8.7A TO252 | ||
| IPD65R660CFDBTMA1 | MOSFET N-CH 650V 6A TO252 | ||
| IPD65R660CFDATMA1 | MOSFET N-CH 650V 6A TO252 | ||
| IPD65R600C6ATMA1 | LOW POWER_LEGACY | ||
| IPD65R600E6BTMA1 | MOSFET N-CH 650V 7.3A TO252-3 | ||
| IPD65R650CEAUMA1 | MOSFET N-CH 650V 7A TO-252 | ||
| IPD65R950CFDATMA1 | MOSFET N-CH 650V 3.9A TO-252 | ||
| IPD65R420CFDATMA2 | LOW POWER_LEGACY | ||
| IPD65R950CFDATMA2 | LOW POWER_LEGACY | ||
| IPD65R660CFDATMA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPD65R420CFDBTMA1 | MOSFET N-CH 650V 8.7A TO252 | ||
| IPD65R600C6 | Trans MOSFET N-CH 700V 7.3A 3-Pin TO-252 T/R (Alt: SP000745020) | ||
| IPD65R600C6BTMA1 | MOSFET N-CH 650V 7.3A TO252 | ||
| IPD65R660CFDA | MOSFET N-Ch 650V 6A DPAK-2 | ||
| IPD65R950C6 | MOSFET N-Ch 700V 4.5A DPAK-2 | ||
| IPD65R950CFD | MOSFET N-Ch 700V 3.9A DPAK-2 | ||
| IPD65R660CFD | Darlington Transistors MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2 | ||
| IPD65R600E6ATMA1 | MOSFET N-Ch 700V 7.3A DPAK-2 | ||
| IPD65R950C6ATMA1 | MOSFET N-Ch 700V 4.5A DPAK-2 | ||
| IPD65R650CEATMA1 | RF Bipolar Transistors MOSFET CONSUMER | ||
| IPD65R950CFDBTMA1 | RF Bipolar Transistors MOSFET N-Ch 700V 3.9A DPAK-2 | ||
Infineon Technologies |
IPD65R660CFDBTMA1 | MOSFET LOW POWER_LEGACY | |
| IPD65R650CEAUMA1 | MOSFET CONSUMER | ||
| IPD65R650CE | 全新原装 | ||
| IPD65R600E | MOSFET, N CH, 700V, 7.3A, TO-252-3 | ||
| IPD65R660CFDXT | 全新原装 | ||
| IPD65R950E6 | 全新原装 | ||
| IPD65R600E6 | Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP000800216) |