STGWT80V60DF

Mfr. #:: STGWT80V60DF
制造商:: STMicroelectronics
描述:: IGBT Transistors Trench gte FieldStop IGBT 600V 80A
生命周期:: 制造商新产品。
数据表:: STGWT80V60DF 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: STGWT80V60DF 更多信息 STGWT80V60DF Product Details

产品属性
属性值

制造商：: 意法半导体

产品分类：: IGBT晶体管

RoHS：: Y

技术：: 硅

包装/案例：: TO-3P

安装方式：: 通孔

配置：: 单身的

集电极-发射极电压 VCEO 最大值：: 600 V

集电极-发射极饱和电压：: 1.85 V

最大栅极发射极电压：: 20 V

25 C 时的连续集电极电流：: 120 A

Pd - 功耗：: 469 W

最低工作温度：: - 55 C

最高工作温度：: + 175 C

系列：: STGWT80V60DF

打包：: 管子

连续集电极电流 Ic 最大值：: 80 A

品牌：: 意法半导体

栅极-发射极漏电流：: 250 nA

产品类别：: IGBT晶体管

出厂包装数量：: 300

子类别：: IGBT

单位重量：: 0.238311 oz

Tags: STGWT8, STGWT, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWT80V60DF 评级和评论

D***v

Set

2019-01-18

P***v

Very long

2019-03-05

STGWT80V60DF 描述

***va Crawler: Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

***ical: Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-3P Tube

***et Europe: Trans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube

***ment14 APAC: IGBT, SINGLE, 600V, 120A, TO-3P-3

***i-Key: IGBT 600V 120A 469W TO-3P

***ark: Igbt, Single, 600V, 120A, To-3P-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-3P; No. Of Pins:3Pins; Rohs Compliant: Yes

STGWT80V60DF 更多信息

IGBT V Series: STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.

Market price

型号	制造商	描述	库存	价格
STGWT80V60DF DISTI # 497-14563-5-ND	STMicroelectronics	IGBT 600V 120A 469W TO-3P RoHS: Compliant Min Qty: 1 Container: Tube	1In Stock	510:$5.6800 120:$6.5228 30:$7.5123 10:$7.8790 1:$8.7200
STGWT80V60DF DISTI # STGWT80V60DF	STMicroelectronics	Trans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube (Alt: STGWT80V60DF) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€3.4900 500:€3.6900 100:€3.8900 50:€3.9900 25:€4.1900 10:€4.3900 1:€4.7900
STGWT80V60DF DISTI # STGWT80V60DF	STMicroelectronics	Trans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80V60DF) RoHS: Compliant Min Qty: 300 Container: Tube	Americas - 0	3000:$4.3900 1500:$4.4900 900:$4.6900 600:$4.8900 300:$5.1900
STGWT80V60DF DISTI # 98Y2475	STMicroelectronics	IGBT, SINGLE, 600V, 120A, TO-3P-3,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-3P,No. of Pins:3Pins,RoHS Compliant: Yes	298	500:$5.4600 250:$5.9900 100:$6.2700 50:$6.7500 25:$7.2200 10:$7.5800 1:$8.3800
STGWT80V60DF DISTI # 511-STGWT80V60DF	STMicroelectronics	IGBT Transistors Trench gte FieldStop IGBT 600V 80A RoHS: Compliant	69	1:$8.3000 10:$7.5000 25:$7.1500 100:$6.2100 250:$5.9300 500:$5.4100 1000:$4.7100
STGWT80V60DF DISTI # 2629743	STMicroelectronics	IGBT, SINGLE, 600V, 120A, TO-3P-3 RoHS: Compliant	294	1:$13.2100
STGWT80V60DF DISTI # 2629743	STMicroelectronics	IGBT, SINGLE, 600V, 120A, TO-3P-3 RoHS: Compliant	294	100:£5.7200 50:£5.7300 10:£5.7400 5:£5.7500 1:£6.1900

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