STGWT80V60DF

STGWT80V60DF
Mfr. #:
STGWT80V60DF
制造商:
STMicroelectronics
描述:
IGBT Transistors Trench gte FieldStop IGBT 600V 80A
生命周期:
制造商新产品。
数据表:
STGWT80V60DF 数据表
交货:
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ECAD Model:
更多信息:
STGWT80V60DF 更多信息 STGWT80V60DF Product Details
产品属性
属性值
制造商
意法半导体
产品分类
IGBT - 单
系列
600-650V IGBTs
打包
管子
单位重量
0.238311 oz
安装方式
通孔
包装盒
TO-3P-3, SC-65-3
输入类型
标准
安装型
通孔
供应商-设备-包
TO-3P
配置
单身的
最大功率
469W
反向恢复时间trr
60ns
电流收集器 Ic-Max
120A
电压收集器发射极击穿最大值
600V
IGBT型
海沟场停止
电流收集器脉冲Icm
240A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 80A
开关能源
1.8mJ (on), 1mJ (off)
栅极电荷
448nC
Td-on-off-25°C
60ns/220ns
测试条件
400V, 80A, 5 Ohm, 15V
钯功耗
469 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
集电极-发射极-电压-VCEO-Max
600 V
集电极-发射极-饱和-电压
1.85 V
25-C 时的连续集电极电流
120 A
栅极-发射极-漏电流
250 nA
最大栅极发射极电压
+/- 20 V
连续集电极电流 Ic-Max
80 A
Tags
STGWT8, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***va Crawler
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
***ical
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube
***ment14 APAC
IGBT, SINGLE, 600V, 120A, TO-3P-3
***i-Key
IGBT 600V 120A 469W TO-3P
***ark
Igbt, Single, 600V, 120A, To-3P-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-3P; No. Of Pins:3Pins; Rohs Compliant: Yes
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
型号 制造商 描述 库存 价格
STGWT80V60DF
DISTI # 497-14563-5-ND
STMicroelectronicsIGBT 600V 120A 469W TO-3P
RoHS: Compliant
Min Qty: 1
Container: Tube
1In Stock
  • 510:$5.6800
  • 120:$6.5228
  • 30:$7.5123
  • 10:$7.8790
  • 1:$8.7200
STGWT80V60DF
DISTI # STGWT80V60DF
STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube (Alt: STGWT80V60DF)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€3.4900
  • 500:€3.6900
  • 100:€3.8900
  • 50:€3.9900
  • 25:€4.1900
  • 10:€4.3900
  • 1:€4.7900
STGWT80V60DF
DISTI # STGWT80V60DF
STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80V60DF)
RoHS: Compliant
Min Qty: 300
Container: Tube
Americas - 0
  • 3000:$4.3900
  • 1500:$4.4900
  • 900:$4.6900
  • 600:$4.8900
  • 300:$5.1900
STGWT80V60DF
DISTI # 98Y2475
STMicroelectronicsIGBT, SINGLE, 600V, 120A, TO-3P-3,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-3P,No. of Pins:3Pins,RoHS Compliant: Yes298
  • 500:$5.4600
  • 250:$5.9900
  • 100:$6.2700
  • 50:$6.7500
  • 25:$7.2200
  • 10:$7.5800
  • 1:$8.3800
STGWT80V60DF
DISTI # 511-STGWT80V60DF
STMicroelectronicsIGBT Transistors Trench gte FieldStop IGBT 600V 80A
RoHS: Compliant
69
  • 1:$8.3000
  • 10:$7.5000
  • 25:$7.1500
  • 100:$6.2100
  • 250:$5.9300
  • 500:$5.4100
  • 1000:$4.7100
STGWT80V60DF
DISTI # 2629743
STMicroelectronicsIGBT, SINGLE, 600V, 120A, TO-3P-3
RoHS: Compliant
294
  • 1:$13.2100
STGWT80V60DF
DISTI # 2629743
STMicroelectronicsIGBT, SINGLE, 600V, 120A, TO-3P-3
RoHS: Compliant
294
  • 100:£5.7200
  • 50:£5.7300
  • 10:£5.7400
  • 5:£5.7500
  • 1:£6.1900
图片 型号 描述
STGWT80H65DFB

Mfr.#: STGWT80H65DFB

OMO.#: OMO-STGWT80H65DFB

IGBT Transistors Trench gate H series 650V 80A HiSpd
STGWT80V60F

Mfr.#: STGWT80V60F

OMO.#: OMO-STGWT80V60F

IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
STGWT80V60DF

Mfr.#: STGWT80V60DF

OMO.#: OMO-STGWT80V60DF

IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65FB

Mfr.#: STGWT80H65FB

OMO.#: OMO-STGWT80H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
STGWT80V60DF

Mfr.#: STGWT80V60DF

OMO.#: OMO-STGWT80V60DF-STMICROELECTRONICS

IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65DFB

Mfr.#: STGWT80H65DFB

OMO.#: OMO-STGWT80H65DFB-STMICROELECTRONICS

IGBT 650V 120A 469W TO3P-3L
STGWT80V60F

Mfr.#: STGWT80V60F

OMO.#: OMO-STGWT80V60F-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGWT80H65FB

Mfr.#: STGWT80H65FB

OMO.#: OMO-STGWT80H65FB-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
可用性
库存:
Available
订购:
3000
输入数量:
STGWT80V60DF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$5.95
US$5.95
10
US$5.65
US$56.51
100
US$5.35
US$535.40
500
US$5.06
US$2 528.25
1000
US$4.76
US$4 759.10
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