STGWT80H65DFB

STGWT80H65DFB
Mfr. #:
STGWT80H65DFB
制造商:
STMicroelectronics
描述:
IGBT 650V 120A 469W TO3P-3L
生命周期:
制造商新产品。
数据表:
STGWT80H65DFB 数据表
交货:
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ECAD Model:
更多信息:
STGWT80H65DFB 更多信息 STGWT80H65DFB Product Details
产品属性
属性值
制造商
意法半导体
产品分类
IGBT - 单
系列
600-650V IGBTs
打包
管子
单位重量
0.238311 oz
安装方式
通孔
包装盒
TO-3P-3, SC-65-3
输入类型
标准
安装型
通孔
供应商-设备-包
TO-3P
配置
单身的
最大功率
469W
反向恢复时间trr
85ns
电流收集器 Ic-Max
120A
电压收集器发射极击穿最大值
650V
IGBT型
海沟场停止
电流收集器脉冲Icm
240A
Vce-on-Max-Vge-Ic
2V @ 15V, 80A
开关能源
2.1mJ (on), 1.5mJ (off)
栅极电荷
414nC
Td-on-off-25°C
84ns/280ns
测试条件
400V, 80A, 10 Ohm, 15V
钯功耗
469 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
集电极-发射极-电压-VCEO-Max
650 V
集电极-发射极-饱和-电压
1.6 V
25-C 时的连续集电极电流
120 A
栅极-发射极-漏电流
250 nA
最大栅极发射极电压
+/- 20 V
连续集电极电流 Ic-Max
80 A
Tags
STGWT8, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
HB Series 650 V 120 A High Speed Trench Gate Field-Stop IGBT - TO-3P
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-3P Tube
***va Crawler
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
***Components
In a Tube of 30, STMicroelectronics STGWT80H65DFB IGBT
***p One Stop Global
Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube
***ied Electronics & Automation
IGBT Trench HB Series 650V 80A TO-3P
***nell
IGBT, SINGLE, 650V, 120A, TO-3P
***i-Key
IGBT 650V 120A 469W TO3P-3L
***ark
IGBT, SINGLE, 650V, 120A, TO-3P; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
型号 制造商 描述 库存 价格
STGWT80H65DFB
DISTI # 32924310
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant
300
  • 200:$3.7485
  • 50:$3.9780
  • 10:$4.1182
  • 3:$9.0780
STGWT80H65DFB
DISTI # 497-14234-5-ND
STMicroelectronicsIGBT 650V 120A 469W TO3P-3L
RoHS: Compliant
Min Qty: 1
Container: Tube
8In Stock
  • 510:$4.8825
  • 120:$5.6070
  • 30:$6.4577
  • 10:$6.7730
  • 1:$7.5000
STGWT80H65DFB
DISTI # STGWT80H65DFB
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube (Alt: STGWT80H65DFB)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€3.4900
  • 500:€3.6900
  • 100:€3.8900
  • 50:€3.9900
  • 25:€4.1900
  • 10:€4.3900
  • 1:€4.7900
STGWT80H65DFB
DISTI # STGWT80H65DFB
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80H65DFB)
RoHS: Compliant
Min Qty: 300
Container: Tube
Americas - 0
  • 3000:$3.7900
  • 1800:$3.8900
  • 1200:$3.9900
  • 600:$4.1900
  • 300:$4.3900
STGWT80H65DFB
DISTI # 45AC7598
STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-3P,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes71
  • 250:$5.1500
  • 100:$5.3900
  • 50:$5.8000
  • 25:$6.2100
  • 10:$6.5100
  • 1:$7.2000
STGWT80H65DFB
DISTI # 511-STGWT80H65DFB
STMicroelectronicsIGBT Transistors Trench gate H series 650V 80A HiSpd
RoHS: Compliant
193
  • 1:$7.1300
  • 10:$6.4500
  • 25:$6.1500
  • 100:$5.3400
  • 250:$5.1000
STGWT80H65DFB
DISTI # 8297136P
STMicroelectronicsIGBT TRENCH HB SERIES 650V 80A TO-3P, TU184
  • 10:£2.9500
STGWT80H65DFB
DISTI # 2807181
STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-3P
RoHS: Compliant
222
  • 1020:$6.4500
  • 510:$7.4100
  • 120:$8.5000
  • 30:$9.7900
  • 1:$11.3700
STGWT80H65DFB
DISTI # 2807181
STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-3P222
  • 100:£3.9100
  • 50:£4.2100
  • 10:£4.5000
  • 5:£5.2200
  • 1:£5.7200
图片 型号 描述
STGWT80H65DFB

Mfr.#: STGWT80H65DFB

OMO.#: OMO-STGWT80H65DFB

IGBT Transistors Trench gate H series 650V 80A HiSpd
STGWT80V60F

Mfr.#: STGWT80V60F

OMO.#: OMO-STGWT80V60F

IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
STGWT80V60DF

Mfr.#: STGWT80V60DF

OMO.#: OMO-STGWT80V60DF

IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65FB

Mfr.#: STGWT80H65FB

OMO.#: OMO-STGWT80H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
STGWT80V60DF

Mfr.#: STGWT80V60DF

OMO.#: OMO-STGWT80V60DF-STMICROELECTRONICS

IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65DFB

Mfr.#: STGWT80H65DFB

OMO.#: OMO-STGWT80H65DFB-STMICROELECTRONICS

IGBT 650V 120A 469W TO3P-3L
STGWT80V60F

Mfr.#: STGWT80V60F

OMO.#: OMO-STGWT80V60F-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGWT80H65FB

Mfr.#: STGWT80H65FB

OMO.#: OMO-STGWT80H65FB-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
可用性
库存:
Available
订购:
5500
输入数量:
STGWT80H65DFB的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$5.62
US$5.62
10
US$5.34
US$53.42
100
US$5.06
US$506.05
500
US$4.78
US$2 389.65
1000
US$4.50
US$4 498.20
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