 | | | |
| PartNumber | BSC077N12NS3 G | BSC077N12NS3GATMA1 | BSC079N03LSC G |
| Description | MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3 | MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 14A TDSON-8 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | PG-TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 120 V | 120 V | 30 V |
| Id Continuous Drain Current | 98 A | 98 A | 14 A |
| Rds On Drain Source Resistance | 6.6 mOhms | 7.7 mOhms | 7.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
| Qg Gate Charge | 88 nC | 66 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 139 W | 139 W | 2.5 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | OptiMOS 3 | BSC079N03 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 40 S | 40 S | - |
| Fall Time | 7 ns | 7 ns | 2.4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | 8 ns | 2.4 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 26 ns | 14 ns |
| Typical Turn On Delay Time | 15 ns | 15 ns | 3 ns |
| Part # Aliases | BSC077N12NS3GATMA1 BSC77N12NS3GXT SP000652750 | BSC077N12NS3 BSC77N12NS3GXT G SP000652750 | BSC079N03LSCGATMA1 BSC79N3LSCGXT SP000527424 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC077N12NS3 G | MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3 | |
| BSC077N12NS3GATMA1 | MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3 | ||
| BSC080N03LSGATMA1 | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 | ||
| BSC080N03MS G | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M | ||
| BSC079N03LSC G | MOSFET N-Ch 30V 14A TDSON-8 | ||
| BSC080P03LS G | MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P | ||
| BSC082N10LS G | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | ||
| BSC077N12NS3GATMA1 | MOSFET N-CH 120V 98A 8TDSON | ||
| BSC079N03LSCGATMA1 | MOSFET N-CH 30V 14A 8TDSON | ||
| BSC079N03SG | MOSFET N-CH 30V 40A TDSON-8 | ||
| BSC079N10NSGATMA1 | MOSFET N-CH 100V 100A TDSON-8 | ||
| BSC080N03LSGATMA1 | MOSFET N-CH 30V 53A TDSON-8 | ||
| BSC080N03MSGATMA1 | MOSFET N-CH 30V 53A TDSON-8 | ||
| BSC080P03LSGAUMA1 | MOSFET P-CH 30V 30A TDSON-8 | ||
Infineon Technologies |
BSC079N10NSGATMA1 | MOSFET MV POWER MOS | |
| BSC079N03LSCGATMA1 | MOSFET LV POWER MOS | ||
| BSC080N03MSGATMA1 | MOSFET LV POWER MOS | ||
| BSC079N10NSGXT | Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP - Tape and Reel (Alt: BSC079N10NSGATMA1) | ||
| BSC079N03LSCGXT | Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP - Tape and Reel (Alt: BSC079N03LSCGATMA1) | ||
| BSC077N12NS3 | 全新原装 | ||
| BSC077N12NS3 G | Trans MOSFET N-CH 120V 13.4A 8-Pin TDSON T/R (Alt: BSC077N12NS3 G) | ||
| BSC077N12NS3G | MOSFET N-CHANNEL 120V 13.4A TDSON8EP, EA | ||
| BSC079N03LS | 全新原装 | ||
| BSC079N03LSC | 全新原装 | ||
| BSC079N03LSG | 全新原装 | ||
| BSC079N03S | 全新原装 | ||
| BSC079N03S G | 全新原装 | ||
| BSC079N03SGATMA1 | 全新原装 | ||
| BSC079N10NS | 全新原装 | ||
| BSC079N10NS3G | 全新原装 | ||
| BSC079N10NSG | 100V,100A,N Channel Power MOSFET | ||
| BSC079N10NSGS | 全新原装 | ||
| BSC080N03LS | 全新原装 | ||
| BSC080N03LS G | Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G) | ||
| BSC080N03LSG | 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC080N03MS G | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G) | ||
| BSC080N03MSG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC080N03NMS | 全新原装 | ||
| BSC080P03LS | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC080P03LS G | MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P | ||
| BSC080P03LSG | Trans MOSFET P-CH 30V 16A 8-Pin TDSON T/R (Alt: BSC080P03LS G) | ||
| BSC080P03LSGAUMA1 , TDK5 | 全新原装 | ||
| BSC0811ND | 全新原装 | ||
| BSC082N03L | 全新原装 | ||
| BSC082N10LS | 全新原装 | ||
| BSC080N03LSGATMA1-CUT TAPE | 全新原装 | ||
| BSC079N03LSCG | MOSFET, N-CH, 30V, 50A, TDSON | ||
| BSC079N03S G | IGBT Transistors MOSFET N-Ch 30V 14.6A TDSON-8 | ||
| BSC079N10NS G | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | ||
| BSC079N03LSC G | RF Bipolar Transistors MOSFET N-Ch 30V 14A TDSON-8 |