SABERs from WeEn utilize state-of-the-art technology which improves overall system reliability and power efficiency. Major process improvements are designed to:

1. Reduce switching losses
2. Maximize operating temperature
3. Improve surge capability
4. Maintain efficiency advantage of NXP diodes

Through suitable choice and accurate control of the epitaxial layer and diffusion depths, combined with state-of-the-art minority carrier lifetime control technology using platinum doping, WeEn achieves the optimum combination of V_F and t_rr at each voltage grade, yielding the best converter efficiency in PFC and SMPS applications.

• Fast switching and soft recovery behavior for low EMI
• Reduced reverse recovery charge
• Ultra-low leakage current
• Higher IFSM capability
• High operating temperature capability (T_j(max) = 175°C)