Built using Transphorm's JEDEC-qualified Gen III GaN platform, the high-voltage TP65H035WSQA offers a 35 mΩ on-resistance in a standard TO247 package, allowing for easy drivability. It is also the company's second AEC-Q101-qualified GaN device to join Transphorm's family of power FETs used in various in-production customer applications. For this latest automotive qualification, Transphorm stressed the FET's thermal limits to 175°C, which is 25°C more than the standard AEC-Q101-qualified high-voltage silicon MOSFETs. Coupling this proven reliability with a 4 V threshold and ±20 V gate robustness, the TP65H035WSQA is one of today's highest quality, highest reliability (Q+R) GaN power semiconductors available.