Alliance Memory's AS4Cxxxxxx and AS4Cxxxxxxxx high-speed CMOS double data rate synchronous DRAMs feature densities of 256 Mb, 512 Mb, and 1 Gb, respectively.
By Alliance Memory, Inc. 59
Alliance Memory's AS7C316098A is a 16 M high-speed CMOS SRAMs in the 48-pin, 12 mm x 20 mm TSOP-1 package.
By Alliance Memory, Inc. 62
Alliance Memory's line of high-speed CMOS double data rate 3 synchronous DRAMs and low-voltage DDR3L SDRAMs feature densities of 1 Gb, 2 Gb, and 4 Gb.
By Alliance Memory, Inc. 47
Alliance Memory's 2M x 32 AS4C2M32S-6xIN; 4M x 32 AS4C4M32S-6xIN; and 8M x 32 AS4C8M32S-6BIN high-speed CMOS synchronous DRAMs.
By Alliance Memory, Inc. 98
Alliance Memory's extends its 64M and 128M lines of with the 2M x 32 AS4C2M32S and 4M x 32 AS4C4M32S high-speed CMOS synchronous DRAMs (SDRAM).
By Alliance Memory, Inc. 90
Alliance Memory's AS6C3216 is a 33,554,432-bit low power CMOS static random access memory organized as 2,097,152 words x 16 bits or 4,194,304 words x 8 bits.
By Alliance Memory, Inc. 76
Alliance Memory's AS4C512M16D3L monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM features lead (Pb)-free FBGA package.
By Alliance Memory, Inc. 71
Alliance Memory's AS4C8M16S-7BCN and AS4C16M16S-7BCN high-speed CMOS synchronous DRAMs features densities of 128 MB and 256 MB, respectively.
By Alliance Memory, Inc. 58
Alliance Memory's AS4CxM16D1 high-speed CMOS double data rate synchronous DRAMs feature densities of 64 Mb, 128 Mb, 256 Mb, and 512 Mb, respectively.
By Alliance Memory, Inc. 70
ATP's implemented AutoRefresh technology monitors the error bit levels during each read operation to better ensure data integrity.
By ATP Electronics, Inc. 36
ATP's S2 Pro SSDs are ruggedized, allowing them to operate in the most demanding environments, and are compliant with MIL-STD-810G.
By ATP Electronics, Inc. 60
Spansion/Cypress introduces thier S34ML08G1, NAND flash memory which is offered in 3.3 Vcc with a x8 I/O interface provides the most cost effective solution for the solid-state, mass-storage marke
By Cypress Semiconductor Corp 55
Cypress adds an interface to its industry-leading nonvolatile RAM (NVRAM) portfolio. The 1 Mb Quad Serial Peripheral Interface (SPI) nvSRAM meets the data throughput performance of 45 ns, high-spe
By Cypress Semiconductor Corp 75
ISSI’s IS61WV1024/204816BLL are high-speed, 16 Mb / 32 Mb static RAM organized as 1024k / 2048K words by 16-bits.
By ISSI, Integrated Silicon Solution Inc. 80
Alliance Memory's AS4C128M16D2, high-speed, CMOS double-data-rate 2 synchronous DDR2 SDRAM features a high 2 Gb density in an 84-ball, FBGA package.
By Alliance Memory, Inc. 62
ISSI offers its IS46TR16640ED, 1-Gbit DDR3 DRAMs that has an embedded error correcting code (ECC), which detects and corrects bit errors on-the-fly.
By ISSI, Integrated Silicon Solution Inc. 83
The Cypress HyperFlash™ family of products are high-speed CMOS, MirrorBit® NOR flash devices with the HyperBus low signal count DDR (double data rate) interface, that achieves high speed read
By Cypress Semiconductor Corp 357
ATP’s industrial-grade memory solutions are high-performance, 4 GB and 8 GB, DDR3-1600, industrial-grade, unbuffered ECC and unbuffered non-ECC, SODIMM, SDRAM memory modules.
By ATP Electronics, Inc. 111
STMicroelectronics has leading edge technology, recognized product robustness, and high manufacturing capacity of serial EEPROM.
By STMicroelectronics 414
The Microchip Technology 47XXX serial EERAM are 4 Kbit / 16 Kbit SRAMs with EEPROM backup and are available in the 8-lead PDIP, SOIC, and TSSOP packages.
By Microchip Technology 406