Vishay’s DG250x are 200 Ω precision monolithic quad single-pole single-throw (SPST) analog switches in the ultra-compact WCSP 4 bump by 4 bump array package.
By Vishay/Siliconix 1331
Alliance Memory's AS4C1M16S-7TCN is a high-speed CMOS synchronous DRAM (SDRAM) with a low density of 16 Mb in a 50-pin, 400-mil plastic TSOP II package.
By Alliance Memory, Inc. 965
Alliance Memory AS4C16MxxMD1, AS4C32MxxMD1, and AS4C64MxxMD1 provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions.
By Alliance Memory, Inc. 1148
Alliance Memory's AS4C16M16D2, AS4C32M16D2, AS4C64M8D2, AS4C64M16D2, AS4C128M8D2, and AS4C128M16D2 high-speed CMOS double data rate 2 synchronous DRAMs.
By Alliance Memory, Inc. 1294
Alliance Memory's AS4Cxxxxxx and AS4Cxxxxxxxx high-speed CMOS double data rate synchronous DRAMs feature densities of 256 Mb, 512 Mb, and 1 Gb, respectively.
By Alliance Memory, Inc. 1240
Diodes operational amplifiers and comparators are designed to operate from a wide range of single power supplies as well as from split power supplies.
By Diodes Incorporated 624
Alliance Memory's AS7C316098A is a 16 M high-speed CMOS SRAMs in the 48-pin, 12 mm x 20 mm TSOP-1 package.
By Alliance Memory, Inc. 1099
STMicroelectronics' DM2 MOSFETs featuring Qrr and trr is optimized for high-voltage full-bridge and half-bridge topologies requiring high switching performance.
By STMicroelectronics 1224
Digilent’s Nexys Video ready-to-use board is a digital circuit development platform based on the latest Artix™-7 Field Programmable Gate Array (FPGA) from Xilinx®.
By Digilent, Inc. 934
Alliance Memory's line of high-speed CMOS double data rate 3 synchronous DRAMs and low-voltage DDR3L SDRAMs feature densities of 1 Gb, 2 Gb, and 4 Gb.
By Alliance Memory, Inc. 1346
Alliance Memory's 2M x 32 AS4C2M32S-6xIN; 4M x 32 AS4C4M32S-6xIN; and 8M x 32 AS4C8M32S-6BIN high-speed CMOS synchronous DRAMs.
By Alliance Memory, Inc. 1397
Alliance Memory's extends its 64M and 128M lines of with the 2M x 32 AS4C2M32S and 4M x 32 AS4C4M32S high-speed CMOS synchronous DRAMs (SDRAM).
By Alliance Memory, Inc. 1341
Alliance Memory's AS6C3216 is a 33,554,432-bit low power CMOS static random access memory organized as 2,097,152 words x 16 bits or 4,194,304 words x 8 bits.
By Alliance Memory, Inc. 1211
Alliance Memory's AS4C512M16D3L monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM features lead (Pb)-free FBGA package.
By Alliance Memory, Inc. 1248
Alliance Memory's AS4C8M16S-7BCN and AS4C16M16S-7BCN high-speed CMOS synchronous DRAMs features densities of 128 MB and 256 MB, respectively.
By Alliance Memory, Inc. 1088
Alliance Memory's AS4CxM16D1 high-speed CMOS double data rate synchronous DRAMs feature densities of 64 Mb, 128 Mb, 256 Mb, and 512 Mb, respectively.
By Alliance Memory, Inc. 1303
Digilent's Pmod LVLSHFT translates logic signals between two user supplied voltage levels communicates with the host board via GPIO.
By Digilent, Inc. 713
ATP's implemented AutoRefresh technology monitors the error bit levels during each read operation to better ensure data integrity.
By ATP Electronics, Inc. 1147
Maxim’s MAXREFDES73# reference design is a wearable, mobile galvanic skin response (GSR) system featuring the MAX32600 wellness measurement microcontroller.
By Maxim Integrated 1456
ATP's S2 Pro SSDs are ruggedized, allowing them to operate in the most demanding environments, and are compliant with MIL-STD-810G.
By ATP Electronics, Inc. 1255