By Vishay/Siliconix 19
Vishay/Siliconix 600 V and 650 V N-channel power MOSFETs series with ultra-low maximum on-resistance and a wide range of current ratings. Based on Vishay’s next generation of Super Junction Technology, the E Series MOSFETs offer ultra-low gate charge and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications.
Featuring Super Junction Technology, Vishay’s E Series of 600 V and 650 V N-channel power MOSFETs achieve high levels of efficiency and power density, while offering lower input capacitance and increased switching speeds over a wide range of current ratings. The MOSFETs provide ultra-low maximum on-resistance from 39 mΩ to 600 mΩ at 10 V, which is 30% lower than previous-generation S Series devices for the same die size. This low on-resistance translates into extremely-low conduction losses to save energy in high-power, high-performance switch-mode applications. Available in the TO-247, TO-220, TO-220 FullPAK, Thin Lead TO-220 FullPAK, TO-251 (IPAK), TO-252 (DPAK), and TO-263 (D²PAK) packages, the E Series offers ultra-low gate charge and low gate charge times on-resistance FOM for power conversion applications.